Recent developments in Terahertz wave detectors for next generation high speed Terahertz wireless communication Systems: A review

Terahertz (THz) devices have been the subject of ongoing study as a fundamental technology for a wide range of industrial applications, including imaging, spectroscopy, and wireless communications. The need for THz systems and devices is anticipated to increase significantly over the next several years, according a recent analysis on market and technological trends. THz-detectors are essential components in THz-wireless receivers. THzdetectors for future wireless communication systems should have high sensitivity, responsivity, wider operating frequency and fast response time, as well as the capacity to function at cryogenic or ambient temperatures. THz-detectors, such as CMOS TeraFETs, Graphene FETs, Schottky diodes, InP-HBTs, GaAs/AlGaAs FETs, glow discharge detectors (GDDs), bolometers, semimetal based detectors, SiGe-FETs, Nano-Ring FETs, III-V HEMTs, HEIWIP-detectors, MSM (metal-semiconductor-metal)-detectors, MMA (metamaterial absorber)-PTE (photothermoelectric) detectors, quantum dots/quantum well detectors, superconducting tunnel junction (STJ) detectors, Josephson junction detectors and Golay cell detectors, have been intensively explored during the last three decades. THz-photodetectors are being extensively investigated due to the rapid advancement of lightwave systems and the growing demand for high-speed data transmissions via optical fibers and wireless links to mobile devices. This article intensively reviews the recent advancements in THz-detectors that operate between 0.1 THz and 10 THz.