Robust Field-Free Switching Using Large Unconventional Spin-Orbit Torque in an All-Van der Waals Heterostructure

被引:7
作者
Zhang, Yiyang [1 ]
Ren, Xiaolin [1 ]
Liu, Ruizi [2 ]
Chen, Zehan [1 ]
Wu, Xuezhao [2 ]
Pang, Jie [3 ]
Wang, Wei [4 ,5 ]
Lan, Guibin [3 ]
Watanabe, Kenji [6 ]
Taniguchi, Takashi [7 ]
Shi, Youguo [3 ]
Yu, Guoqiang [3 ]
Shao, Qiming [1 ,2 ]
机构
[1] Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong 999077, Peoples R China
[2] Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Kowloon, Hong Kong 999077, Peoples R China
[3] Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R China
[4] Nanjing Tech Univ NanjingTech, Sch Flexible Elect Future Technol, Key Lab Flexible Elect KLoFE, Nanjing 211816, Peoples R China
[5] Nanjing Tech Univ NanjingTech, Inst Adv Mat IAM, Sch Flexible Elect Future Technol, Nanjing 211816, Peoples R China
[6] Natl Inst Mat Sci, Res Ctr Elect & Opt Mat, 1-1 Namiki, Tsukuba 3050044, Japan
[7] Natl Inst Mat Sci, Res Ctr Mat Nanoarchitecton, 1-1 Namiki, Tsukuba 3050044, Japan
基金
国家重点研发计划; 中国国家自然科学基金;
关键词
2D magnet; current-induced magnetization switching; spin-orbit torque; van der Waal material; Weyl semimetal; INTRINSIC FERROMAGNETISM; FE3GATE2; CRYSTAL;
D O I
10.1002/adma.202406464
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The emerging all-van der Waals (vdW) magnetic heterostructure provides a new platform to control the magnetization by the electric field beyond the traditional spintronics devices. One promising strategy is using unconventional spin-orbit torque (SOT) exerted by the out-of-plane polarized spin current to enable deterministic magnetization switching and enhance the switching efficiency. However, in all-vdW heterostructures, large unconventional SOT remains elusive and the robustness of the field-free switching against external magnetic field has not been examined, which hinders further applications. Here, the study demonstrates the field-free switching in an all-vdW heterostructure combining a type-II Weyl semimetal TaIrTe4 and above-room-temperature ferromagnet Fe3GaTe2. The fully field-free switching can be achieved at 2.56 x 1010 A m-2 at 300 K and a large SOT effective field efficiency of the out-of-plane polarized spin current generated by TaIrTe4 is determined to be 0.37. Moreover, it is found that the switching polarity cannot be changed until the external in-plane magnetic field reaches 252 mT, indicating a robust switching against the magnetic field. The numerical simulation suggests the large unconventional SOT reduces the switching current density and enhances the robustness of the switching. The work shows that all-vdW heterostructures are promising candidates for future highly efficient and stable SOT-based devices. The study uses the low-symmetry Weyl semimetal TaIrTe4 and above-room-temperature van der Waals ferromagnet Fe3GaTe2 to achieve the field-free magnetization switching. The unconventional SOT effective field efficiency is determined to be 0.37, and the switching-polarity-change magnetic field is as high as 252 mT, indicating a robust field-free switching against the external magnetic field. image
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页数:8
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