A parameter extraction method for InP HBT small-signal model considering emitter-collector laminated capacitance effect

被引：0

作者：

Su, Xiang ^{[1
,2
]}

Mao, Shuman ^{[1
,2
]}

Wang, Yutong ^{[3
]}

Tang, Min ^{[4
]}

Yan, Bo ^{[2
]}

Xu, Yuehang ^{[1
,2
]}

机构：

[1] Univ Elect Sci & Technol China, Yangtze Delta Reg Inst Huzhou, Huzhou 313001, Peoples R China

[2] Univ Elect & Sci Technol China, Sch Elect Sci & Engn, Chengdu 611731, Peoples R China

[3] Hebei Semicond Res Inst, Shijiazhuang, Peoples R China

[4] Shanghai Jiao Tong Univ, Key Lab Minist Educ China Res Design & Electromagn, Shanghai, Peoples R China

来源：

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2024年 / 66卷 / 08期

基金：

中国国家自然科学基金;

关键词：

closed-form extraction; emitter-collector capacitance effects; heterojunction bipolar transistor; small-signal model; EQUIVALENT-CIRCUIT MODEL; BASE;

D O I：

10.1002/mop.34285

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The extraction of small-signal parameters is of great importance for the modeling of InP heterojunction bipolar transistors (HBTs). This letter proposes an improved small-signal parameter extraction method that considers both the emitter-collector capacitance effect and the current crowding effect. The corresponding parameter extraction procedure based on closed-form equations is outlined. Furthermore, the model parameter extraction method is validated using two different-sized InP HBT devices with multibias S-parameters. The results demonstrate that the established small-signal model exhibits greater than 90% accuracy across the frequency range of 1-110 GHz. In particular, in the high-frequency band (above 50 GHz), the proposed model exhibits an improvement in accuracy of 7.4% after considering the emitter-collector capacitance and current crowding effects. This method can contribute to accurate modeling of the noise and large-signal performance of InP HBT.

引用

页数：9

共 22 条

[1] Direct parameter-extraction method for HBT small-signal model [J].

Bousnina, S ;

Mandeville, P ;

Kouki, AB ;

Surridge, R ;

Ghannouchi, FM .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2002, 50 (02) :529-536

[2] An augmented small-signal model of InP HBT with its analytical-based parameter extraction technique [J].

Cheng, Lin ;

Lu, Hongliang ;

Xia, Minjie ;

Cheng, Wei ;

Zhang, Yuming ;

Zhang, Yimen .

MICROELECTRONICS JOURNAL, 2022, 121

[3] DIRECT EXTRACTION OF THE ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR SMALL-SIGNAL EQUIVALENT-CIRCUIT [J].

COSTA, D ;

LIU, WU ;

HARRIS, JS .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (09) :2018-2024

[4] Systematic and rigorous extraction method of HBT small-signal model parameters [J].

Degachi, L ;

Ghannouchi, FM .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2006, 54 (02) :682-688

[5] An augmented small-signal HBT model with its analytical based parameter extraction technique [J].

Degachi, Louay ;

Ghannouchi, Fadhel M. .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2008, 55 (04) :968-972

[6] An Accurate Model for InP HEMT Small-Signal Equivalent Circuit Based on EM Simulation [J].

Feng, Zhiyu ;

Cao, Shurui ;

Feng, Ruize ;

Zhou, Fugui ;

Su, Yongbo ;

Ding, Wucang ;

Jin, Zhi .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2023, 70 (03) :934-940

[7] A 190-GHz High-Gain, 3-dBm OP1dB Low DC-Power Amplifier in 250-nm InP HBT [J].

Griffith, Zach ;

Urteaga, Miguel ;

Rowell, Petra .

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2017, 27 (12) :1128-1130

[8]

Hacker J, 2010, IEEE MTT S INT MICR, P1126, DOI 10.1109/MWSYM.2010.5517225

[9]

Johansen TK., 2015, IEEE Trans Microwave Theory Tech, V64, P115

[10]

John D., 2008, Measurement and Modeling of Silicon Heterostructure Devices

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