Study on 4H-SiC Trench Schottky-Type Neutron Detector

被引:0
作者
Jiang, Wan-Chen [1 ]
Wang, Ying [1 ]
Hong, Bing [2 ]
Liu, Yun-Tao [3 ]
Zhang, Rui [4 ]
机构
[1] Hangzhou Dianzi Univ, Sch Elect & Informat, Hangzhou 310018, Peoples R China
[2] Hefei Comprehens Natl Sci Ctr, Inst Energy, Hefei 230031, Peoples R China
[3] Harbin Engn Univ, Coll Informat & Commun Engn, Harbin 150001, Peoples R China
[4] Chinese Acad Sci, Inst Nucl Energy Safety & Technol INEST, Hefei Inst Phys Sci, Hefei 230031, Peoples R China
关键词
Neutrons; Detectors; Schottky diodes; Silicon carbide; Semiconductor diodes; Schottky barriers; Junctions; 4H-SiC; detection efficiency; high-temperature resistant; neutron response; trench Schottky; SILICON-CARBIDE; DETECTION EFFICIENCY; PERFORMANCE; DIAMOND; DIODE;
D O I
10.1109/TIM.2024.3421438
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this article, a trench Schottky barrier diode (SBD) structure based on a wide bandgap, high temperature, and irradiation resistant 4H-SiC material is innovatively proposed, and the neutron conversion material (LiF)-Li-6 is filled into the trench array to make a neutron detector. The detector increases both the amount of (LiF)-Li-6 filling and the total contact area between (LiF)-Li-6 and the semiconductor material 4H-SiC by etching out the trenches. The neutron response experimental study revealed that the count rate of the detector is as high as 580 Hz, corresponding to a detection efficiency of 6.57%, which breaks through the limitation that the detection efficiency of thin-film coated-type detectors is less than 5%, which is one of the main contributions of the detector. The utilization of refractory metal tungsten (W) as the frontal Schottky contact electrode enables the detector to maintain a count rate of approximately 100 Hz at 180 degrees C, which indicates that there exists a possibility that the detector can work in high temperature environments, and also provides the experimental basis for the development of high-temperature resistant neutron detectors.
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页数:9
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