Ultra-Low Power 60 GHz Class-C Frequency Tripler in 22-nm FDSOI CMOS Technology

被引:1
作者
Gupta, Aditya [1 ]
Dietz, Marco [2 ]
Engelmann, Andre [3 ]
Hagelauer, Amelie [2 ]
机构
[1] Tech Univ Munich, Dept Elect Engn, Munich, Germany
[2] Fraunhofer Inst Elect Microsyst & Solid State Tec, Munich, Germany
[3] Friedrich Alexander Univ Erlangen Nuremberg, Inst Elect Engn, Erlangen, Germany
来源
15TH IEEE LATIN AMERICAN SYMPOSIUM ON CIRCUITS AND SYSTEMS, LASCAS 2024 | 2024年
关键词
CMOS process; FDSOI; frequency multiplier; localization; millimeter wave integrated circuits; LOCALIZATION; SYSTEMS;
D O I
10.1109/LASCAS60203.2024.10506144
中图分类号
TP39 [计算机的应用];
学科分类号
081203 ; 0835 ;
摘要
This paper presents a 60 GHz class-C frequency tripler, implemented in 22-nm FDSOI (fully depleted silicon-on-insulator) CMOS technology, for ultra-low power and highly integrated radios used in millimeter-wave indoor localization applications. The tripler employs a multi-stage transformer-coupled differential design with band-pass filters to selectively extract and amplify the power at the 3rd harmonic (3f(0)) tone while attenuating powers at fundamental (f(0)) and second harmonic (2f(0)) tones. An integrated bias generator with resistor trimming, improves the tripler robustness to the on-chip process and mismatch variations. The tripler exhibits a maximum conversion gain (CG) and peak conversion efficiency (CE) of -0.7 dB and 12.63%, respectively, at 60 GHz, and a 3-dB bandwidth of 3.6 GHz with a total DC power consumption (P-DC) of 7.9mW at 0.8 V supply. A harmonic rejection ratio (HRR) exceeding 45 dB for fundamental and second harmonic tones is achieved. The maximum saturated output power (P-SAT) obtained is 0.9 dBm. The circuit occupies 0.4 mm(2) area, including pads.
引用
收藏
页码:133 / 137
页数:5
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