Simulation based analysis of HK-Ge-Step-FinFET and its usage as inverter & SRAM

This paper deals with comparative simulation of High-k dielectrics -Germanium Step FinFET (HK-Ge-Step-FinFET) device with reference Step FinFET. For the first time we have investigated the impact of various dimensional parameters like oxide thickness tox, gate length Lg, drain bias voltage Vds on the performance of Proposed and Reference FinFET devices. These FinFET structures have been designed and simulated in Sentaurus TCAD and Cadence Virtuoso. The electrical parameters such as current ratio ION/IOFF, Sub-threshold Swing SS , Drain Induced Barrier Lowering (DIBL), threshold voltage Vth, gate capacitance, intrinsic delay and transconductance are extracted at 10 nm gate length. It is noticed that there is a significant improvement of 28 times and 23 times in ION for proposed device over reference FINFET at Vds = 1 V and Vds = 0.5 V respectively, improvement in ION/IOFF ratio from 8.05 x 108 to 6.65 x 1010, SS of 63.21 mV/decade to 61.5 mV/decade and excellent threshold voltage of 0.18 V in proposed FinFET. The characteristics of the proposed SRAM cell including, static noise margin (SNM), read/write delay, and subthreshold leakage power, are compared with the conventional 6 T SRAM cells. It is reported that the FinFET SRAM cell has RSNM, HSNM, and WNM of 285 mV, 360 mV, and 302 mV, respectively, at Vds = 1 V. Furthermore, the suggested device-based SRAM cell outperforms traditional SRAM cells at 1.0 V in terms of read noise margin, hold noise margin, and write noise margin, as well as leakage power. Thus, it may prove to be a viable option for lowering leakage components, making it effective for low-power and high-performance inverter and SRAM cell design in the nanoscale regime.