Hydrogenated Graphene as a Homoepitaxial Tunnel Barrier for Spin and Charge Transport in Graphene

被引：34
|
作者：
Friedman, Adam L. [1 ]
van 't Erve, Olaf M. J. [1 ]
Robinson, Jeremy T. [2 ]
Whitener, Keith E., Jr. [3 ]
Jonker, Berend T. [1 ]
机构：
[1] US Navy, Mat Sci & Technol Div, Res Lab, Washington, DC 20375 USA
[2] US Navy, Elect Sci & Technol Div, Res Lab, Washington, DC 20375 USA
[3] US Navy, Div Chem, Res Lab, Washington, DC 20375 USA
来源：
ACS NANO | 2015年 / 9卷 / 07期
关键词：
graphene; hydrogenated graphene; electronic transport; spin transport; tunnel barrier; ROOM-TEMPERATURE; DEVICES; SINGLE; SPINTRONICS; INJECTION; SILICON;
D O I：
10.1021/acsnano.5b02795
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
We demonstrate that hydrogenated graphene performs as a homoepitaxial tunnel barrier on a graphene charge/spin channel. We examine the tunneling behavior through measuring the IV curves and zero bias resistance. We also fabricate hydrogenated graphene/graphene nonlocal spin valves and measure the spin lifetimes using the Hanle effect, with spintronic nonlocal spin valve operation demonstrated up to room temperature. We show that while hydrogenated graphene indeed allows for spin transport in graphene and has many advantages over oxide tunnel barriers, it does not perform as well as similar fluorinated graphene/graphene devices, possibly due to the presence of magnetic moments in the hydrogenated graphene that act as spin scatterers.
引用
收藏
页码：6747 / 6755
页数：9
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