Analytical Modeling of Short-Channel MOSFET Differential Pair Non-Linearity

被引：1

作者：

Pekcokguler, Naci ^{[1
,2
,3
]}

Han, Hung-Chi ^{[4
]}

Morche, Dominique ^{[3
]}

Dehollain, Catherine ^{[4
,5
]}

Burg, Andreas ^{[5
]}

Enz, Christian

机构：

[1] MINATEC Campus, CEA, LETI, F-38054 Grenoble, France

[2] Ecole Polytech Fed Lausanne, CH-1015 Lausanne, Switzerland

[3] Analog Devices Inc, D-85737 Munich, Germany

[4] Ecole Polytech Fed Lausanne EPFL, CH-2000 Neuchatel, Switzerland

[5] Ecole Polytech Fed Lausanne EPFL, CH-1015 Lausanne, Switzerland

来源：

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS | 2024年 / 71卷 / 10期

关键词：

Integrated circuit modeling; Semiconductor device modeling; Analytical models; MOSFET; Circuits; Transistors; Power demand; MOSFET non-linearity model; differential pair non-linearity; charge-based; EKV model; drain voltage induced non-linearity; OTA non-linearity; amplifier non-linearity; CMOS; OPTIMIZATION; DISTORTION;

D O I：

10.1109/TCSI.2024.3399001

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Energy efficiency is of utmost importance in modern applications. Power consumption optimisation could be improved by a comprehensive analytical modeling of the characteristics of critical blocks in a system. Dynamic range (DR) has a strong effect on the power consumption of analog circuits, and is determined by circuit non-linearity and noise level. Noise is well modelled even in deep sub-micron technologies, yet there is a lack of analysis and modeling of the non-linearity. An analytical MOSFET differential pair non-linearity model is presented in this work. The proposed model is universal to a wide range of technologies from long to ultra-deep sub-micron devices, and is valid for all operating regions as it is based on the EKV MOSFET model. Furthermore, a model including drain-voltage-induced non-linearity is also developed, and a concise 3 dB input intercept point (IIP3) formula incorporating the drain induced non-linearity in terms of the voltage gain is presented. The proposed models are validated with DC and AC simulations and measurements.

引用

页码：4411 / 4419

页数：9

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