Impact of crystallinity on thermal conductivity of RF magnetron sputtered MoS2 thin films

被引：2

作者：

Kitazawa, Tatsuya ^{[1
]}

Inaba, Yuta ^{[1
]}

Yamashita, Shunsuke ^{[1
]}

Imai, Shinya ^{[2
]}

Kurohara, Keita ^{[2
]}

Tatsumi, Tetsuya ^{[2
]}

Wakabayashi, Hitoshi ^{[2
]}

Tomiya, Shigetaka ^{[1
,2
,3
]}

机构：

[1] Sony Semicond Solut Corp, 4-14-1 Asahi Cho, Atsugi, Kanagawa 2430014, Japan

[2] Tokyo Inst Technol, 4259 Nagatsuta Cho,Midori Ku, Yokohama 2268502, Japan

[3] Nara Inst Sci & Technol, 8916-5 Takayama Cho, Ikoma, Nara 6300192, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2024年 / 63卷 / 05期

基金：

日本学术振兴会;

关键词：

thermal conductivity; crystallinity; 2D material; transition metal dichalcogenides; RF magnetron sputter; raman spectroscopy; scanning transmission electron microscopy; TEMPERATURE-DEPENDENT RAMAN; TRANSPORT; TRANSISTORS;

D O I：

10.35848/1347-4065/ad46ae

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This study investigates the effects of sulfur atomic defects and crystallinity on the thermal conductivity of MoS2 thin films. Utilizing scanning transmission electron microscopy (STEM), X-ray diffraction (XRD), and Raman spectroscopy, we examined MoS2 films, several nanometers thick, deposited on Si/SiO2 substrates. These films were prepared via a combination of RF magnetron sputtering and sulfur vapor annealing (SVA) treatment. Structural analyses, including cross-sectional STEM and in-plane and out-of-plane XRD measurements, revealed an increase in the S/Mo ratio and grain size of the MoS2 films following SVA treatment. Notably, the in-plane thermal conductivity of MoS2 films treated with SVA was found to be at least an order of magnitude higher than that of films without SVA treatment. This research suggests that the in-plane thermal conductivity of MoS2 thin films can be significantly enhanced through crystallinity improvement via SVA treatment.

引用

页数：8

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