Robustness Assessment Through 77GHz Operating Life Test of Power Amplifier for Radar Applications in 28nm FD-SOI CMOS

被引：0

作者：

Cacho, F. ^{[1
]}

Cathelin, P. ^{[1
]}

Hai, J. ^{[1
]}

Bouvot, S. ^{[1
]}

Nowakowski, J. ^{[1
]}

Martinez, M. ^{[1
]}

Debroucke, R. ^{[1
]}

Jean, S. ^{[1
]}

Paulin, R. ^{[1
]}

Antonijevic, J. ^{[1
]}

Federspiel, X. ^{[1
]}

Planes, N. ^{[1
]}

Papotto, G. ^{[2
]}

Parisi, A. ^{[2
]}

Finocchiaro, A. ^{[2
]}

Cavarra, A. ^{[2
]}

Castorina, A. ^{[2
]}

Nocera, C. ^{[2
]}

Palmisano, G. ^{[3
]}

机构：

[1] STMicroelectronics, F-38926 Crolles, France

[2] STMicroelectronics, I-95121 Catania, Italy

[3] Univ Catania, DIEEI, I-95125 Catania, Italy

来源：

2024 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, IRPS 2024 | 2024年

关键词：

RF CMOS reliability; Power Amplifier; Operating Life Test;

D O I：

10.1109/IRPS48228.2024.10529364

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

RF reliability of a power amplifier is analyzed for automotive applications. Autonomous driving detection based on radar sensors require a high level of reliability to perform the mission during the operative lifetime. The robustness of power amplifier under RF stress is presented in the paper. After introduction of the receiver/transmitter components and phase modulation scheme used in radar sensor, a first analysis is performed at device level to figure out the reliability capability to sustain aggressive voltage profile. Using a 77GHz vectorial load-pull tester, several stresses are carried out to exacerbate the degradation of a LVT NMOS in 28nm FD-SOI technology, used as a power stage. With special tuning of the biasing point, input and output matching networks and input power, is it possible to generate voltage profile that mimics a load-line of class-AB power amplifier, or a RF voltage profile centered in the worst-case hot carrier DC condition, i.e. V-DS close to V-GS. Results show small degradation for these two RF profiles. Then, in the second part, Operating Life Test is performed at 77GHz with a dedicated test chip where RF signal is build-in and output amplified power is measured with a power meter. Characterization of the output power is performed both in the on-wafer and the on-board version. The result of 1500h burn-in for several parts is presented. The degradation magnitude during the stress is in agreement with simulation.

引用

页数：6

共 11 条

[1] A 77-GHz 8RX3TX Transceiver for 250-m Long-Range Automotive Radar in 40-nm CMOS Technology [J].