Dynamic RON Degradation Suppression by Gate Field Plate in Partially Recessed AlGaN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors

被引：0

作者：

Liang, Ye ^{[1
,2
]}

He, Xiuyuan ^{[1
,2
]}

Feng, Xi ^{[1
,2
]}

Zhang, Yuanlei ^{[1
,2
]}

Zhang, Jie ^{[2
,3
]}

Liu, Wen ^{[1
,2
]}

机构：

[1] Xian Jiaotong Liverpool Univ, Sch Adv Technol, Suzhou 215123, Peoples R China

[2] Univ Liverpool, Dept Elect Engn & Elect, Liverpool L69 3GJ, England

[3] Xian Jiaotong Liverpool Univ, Entrepreneur Coll Taicang, Sch Chips, Suzhou 215123, Peoples R China

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2024年 / 221卷 / 21期

基金：

中国国家自然科学基金;

关键词：

AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors; dynamic on-resistances; field plates; INDUCED CURRENT COLLAPSE; MIS-HEMTS; SURFACE; TEMPERATURE; SI; PERFORMANCE; VOLTAGE;

D O I：

10.1002/pssa.202300976

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This study investigates the impact of gate field plate (G-FP) lengths on the dynamic on-resistance degradation in partially recessed-gate D-mode GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs). Devices with G-FPs of varying lengths are fabricated, and their electrical characteristics are evaluated. It is found that G-FPs effectively reduce electron trapping and suppress the dynamic on-resistance degradation, leading to improved device performance. The study provides design suggestions for enhancing the reliability and stability of AlGaN/GaN-based MIS-HEMTs.

引用

页数：5

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