Dynamic RON Degradation Suppression by Gate Field Plate in Partially Recessed AlGaN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors

被引：0
作者：
Liang, Ye [1 ,2 ]
He, Xiuyuan [1 ,2 ]
Feng, Xi [1 ,2 ]
Zhang, Yuanlei [1 ,2 ]
Zhang, Jie [2 ,3 ]
Liu, Wen [1 ,2 ]
机构：
[1] Xian Jiaotong Liverpool Univ, Sch Adv Technol, Suzhou 215123, Peoples R China
[2] Univ Liverpool, Dept Elect Engn & Elect, Liverpool L69 3GJ, England
[3] Xian Jiaotong Liverpool Univ, Entrepreneur Coll Taicang, Sch Chips, Suzhou 215123, Peoples R China
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2024年 / 221卷 / 21期
基金：
中国国家自然科学基金;
关键词：
AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors; dynamic on-resistances; field plates; INDUCED CURRENT COLLAPSE; MIS-HEMTS; SURFACE; TEMPERATURE; SI; PERFORMANCE; VOLTAGE;
D O I：
10.1002/pssa.202300976
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
This study investigates the impact of gate field plate (G-FP) lengths on the dynamic on-resistance degradation in partially recessed-gate D-mode GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs). Devices with G-FPs of varying lengths are fabricated, and their electrical characteristics are evaluated. It is found that G-FPs effectively reduce electron trapping and suppress the dynamic on-resistance degradation, leading to improved device performance. The study provides design suggestions for enhancing the reliability and stability of AlGaN/GaN-based MIS-HEMTs.
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收藏
页数：5
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