Gas sensing using metal oxide semiconductor doped with rare earth elements: A review

被引：16

作者：

Sharma, Neha ^{[1
]}

Choudhury, Sandip Paul ^{[1
]}

机构：

[1] Amity Univ Rajasthan, Amity Sch Appl Sci, Jaipur, Rajasthan, India

来源：

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS | 2024年 / 307卷

关键词：

Gas sensing; MOSs; REEs; Doping; SNO2 HOLLOW NANOFIBERS; HYDROTHERMAL SYNTHESIS; ZNO NANOWIRES; THIN-FILM; PERFORMANCE; SENSORS; IN2O3; ND; NANOSPHERES; NANORODS;

D O I：

10.1016/j.mseb.2024.117505

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Research on gas sensing is a wide field due to the variety of gases present in the Environment. These gases at times are carcinogenic and affect human health. Detection of these gases is important for the future safety of the environment. A variety of gas sensing materials has been explored but Metal Oxide Semiconductors (MOSs) have been very popular due to their wide band gap and low cost. After doping of rare earth elements (REEs) in MOSs the surface activity and electrical conductivity increase, which enhance the gas sensing applications of MOSs and reduced the operating temperature to detect the gases. This review work gives a brief on the different types of MOSs doped with REEs. In Future Scope, some ideas are also discussed which can enhance the gas sensing qualities.

引用

页数：15

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