Ring-Assisted Mach-Zehnder Modulator on the InP Membrane on Silicon Platform

被引：2
作者：
Kashi, A. A. [1 ,2 ]
van der Tol, J. J. G. M. [2 ]
Lebby, M. S. [3 ]
Zhang, X. [1 ]
Williams, K. [2 ]
Jiao, Y. [2 ]
机构：
[1] IMEC Netherlands, HTC 31, NL-5656 AE Eindhoven, Netherlands
[2] Eindhoven Univ Technol, Inst Photon Integrat IPI, NL-5600 MB Eindhoven, Netherlands
[3] Lightwave Logic Co, Englewood, CO 80112 USA
来源：
JOURNAL OF LIGHTWAVE TECHNOLOGY | 2024年 / 42卷 / 13期
关键词：
Modulation; Optical waveguides; Electro-optical waveguides; Electro-optic modulators; Optical device fabrication; Optical modulation; Plastics; optical polymers; optical modulation; optical communication; Integrated optics; Electrooptic modulators; STABILITY; INTERFEROMETER; 50G-PON;
D O I：
10.1109/JLT.2024.3373762
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper describes the design and fabrication of a slot waveguide ring-assisted Mach-Zehnder modulator (RAMZM) on the InP membrane on Silicon (IMOS) platform. The low-frequency characterization of this modulator reveals that it can achieve a V-pi L-pi product as low as 5.1 V.mm and an extinction ratio equal to 12 dB. The 3-dB electro-optical bandwidth of this modulator is measured to be 8.5 GHz. This paper discusses working principles, design, fabrication, measurements, analysis of the electrical and electro-optic performance, and the prospects of this modulator.
引用
收藏
页码：4553 / 4562
页数：10
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