Effect of stress control by growth adjustment on the edge thread dislocation density of AlN grown on the sapphire

被引：2

作者：

Zhang, Yuheng ^{[1
,2
]}

Yang, Jing ^{[1
]}

Liang, Feng ^{[1
]}

Liu, Zongshun ^{[1
]}

Hou, Yufei ^{[1
]}

Liu, Bing ^{[3
]}

Zheng, Fu ^{[3
]}

Liu, Xuefeng ^{[3
]}

Zhao, Degang ^{[1
,2
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China

[2] Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 100049, Peoples R China

[3] Chinese Acad Sci, Natl Space Sci Ctr, Key Lab Elect & Informat Technol Space Syst, Beijing 100190, Peoples R China

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2024年 / 39卷 / 07期

基金：

中国国家自然科学基金; 国家重点研发计划;

关键词：

AlN; growth stress; edge dislocation; mechanical calculations; RAMAN-SCATTERING; INTRINSIC STRESS; EVOLUTION; TEMPERATURE; OVERGROWTH;

D O I：

10.1088/1361-6641/ad5581

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The relationship between stress and dislocation density in MOCVD epitaxial AlN was studied. It has been found that the aluminum nitride (AlN) epitaxial layer generates tensile stress when the crystal islands are merged. By controlling the size and density of crystal islands at the end of 3D growth, the tensile stress generated during epitaxy can be effectively reduced. Mechanical calculations show that there is a linear relationship between the edge thread dislocations density of AlN and the tensile stress during growth. By controlling the stress during AlN growth below 0.1 Gpa, a high-quality AlN sample with an edge thread dislocation density of 6.31 x 107 cm-2 was obtained.

引用

页数：9

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