High-performance, low-power, and flexible ultraviolet photodetector based on crossed ZnO microwires p-n homojunction

Low -power, flexible, and integrated photodetectors have attracted increasing attention due to their potential applications of photosensing, astronomy, communications, wearable electronics, etc. Herein, the samples of ZnO microwires having p -type (Sb-doped ZnO, ZnO:Sb) and n -type (Ga-doped ZnO, ZnO:Ga) conduction properties were synthesized individually. Sequentially, a p -n homojunction vertical structure photodiode involving a single ZnO:Sb microwire crossed with a ZnO:Ga microwire, which can detect ultraviolet light signals, was constructed. When exposed under 360 nm light illumination at - 0.1 V, the proposed photodiode reveals pronounced photodetection features, including a largest on/off ratio of 10 5 , responsivity of 2.3 A/W, specific detectivity of similar to 6.5 x 10 13 Jones, noise equivalent power of 4.8 x 10 - 15 W Hz - 1 / 2 , and superior photoelectron conversion efficiency of similar to 7.8%. The photodiode also exhibits a fast response/recovery time of 0.48 ms/9.41 ms. Further, we propose a facile and scalable construction scheme to integrate a p-ZnO:Sb circle times n-ZnO:Ga microwires homojunction component into a flexible, array -type detector, which manifests significant flexibility and electrical stability with insignificant degradation. Moreover, the as -constructed array unit can be integrated into a practical photoimaging system, which demonstrates remarkable high -resolution single -pixel imaging capability. The results represented in this work may supply a workable approach for developing low -dimensional ZnO-based homojunction optoelectronic devices with low -consumption, flexible, and integrated characteristics. (c) 2024 Chinese Laser Press