Dual-Layer Dielectric Stack for Thermally Isolated Low-Energy Phase-Change Memory

被引：31

作者：

Fong, Scott W. ^{[1
,2
]}

Neumann, Christopher M. ^{[1
,2
]}

Yalon, Eilam ^{[1
,2
]}

Rojo, Miguel Munoz ^{[1
,2
]}

Pop, Eric ^{[1
,2
]}

Wong, H. -S. Philip ^{[1
,2
]}

机构：

[1] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA

[2] Stanford Univ, Stanford SystemX Alliance, Stanford, CA 94305 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2017年 / 64卷 / 11期

基金：

美国国家科学基金会;

关键词：

Phase-change memory (PCM); reset energy; thermal conductivity; thermal design; CONDUCTIVITY;

D O I：

10.1109/TED.2017.2756071

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High reset energy is an ongoing issue for phase-change memory (PCM) devices. Prior work demonstrates that smaller PCM switching volume and thermal isolation can reduce the reset energy. In this paper, we fabricate and measure a planar confined PCM device with a multilayer dual-layer stack (DLS) of SiO2/Al2O3 insulator. Devices with contact area of 500 x 20 nm and lengths of 2 mu m show exceptionally low reset energies of 18.25 +/- 15.8 pJ and low reset current densities of 0.94 +/- 0.51 MA/cm(2). Implementing the DLS enables a 60% reduction in reset energy compared with SiO2-isolated devices.

引用

页码：4496 / 4502

页数：7