Field Emission Properties of Cu-Filled Vertically Aligned Carbon Nanotubes Grown Directly on Thin Cu Foils

被引：4

作者：

Nwanno, Chinaza E. ^{[1
]}

Thapa, Arun ^{[1
]}

Watt, John ^{[2
]}

Bendayan, Daniel Simkins ^{[1
]}

Li, Wenzhi ^{[1
]}

机构：

[1] Florida Int Univ, Dept Phys, Miami, FL 33199 USA

[2] Los Alamos Natl Lab, Ctr Integrated Nanotechnol, Los Alamos, NM 87545 USA

来源：

NANOMATERIALS | 2024年 / 14卷 / 11期

基金：

美国国家科学基金会;

关键词：

VACNTs; copper; PECVD; field emission; ENHANCEMENT FACTOR; COPPER SUBSTRATE; BETA-CAROTENE; WORK FUNCTION; NANOPARTICLES; ENCAPSULATION; NANOWIRES; STABILITY; CATHODE; METALS;

D O I：

10.3390/nano14110988

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Copper-filled vertically aligned carbon nanotubes (Cu@VACNTs) were grown directly on Cu foil substrates of 0.1 mm thicknesses at different temperatures via plasma-enhanced chemical vapor deposition (PECVD). By circumventing the need for additional catalyst layers or intensive substrate treatments, our in-situ technique offers a simplified and potentially scalable route for fabricating Cu@VACNTs with enhanced electrical and thermal properties on thin Cu foils. Comprehensive analysis using field emission scanning microscopy (FESEM), transmission electron microscopy (TEM), energy-dispersive X-ray spectroscopy (EDS) mappings, and X-ray diffraction (XRD) revealed uniform Cu filling within the VACNTs across a range of synthesis temperatures (650 degrees C, 700 degrees C, and 760 degrees C). Field emission (FE) measurements of the sample synthesized at 700 degrees C (S700) showed low turn-on and threshold fields of 2.33 V/mu m and 3.29 V/mu m, respectively. The findings demonstrate the viability of thin Cu substrates in creating dense and highly conductive Cu-filled VACNT arrays for advanced electronic and nanoelectronics applications.

引用

页数：15

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