Optically-Pumped Lasing in GeSn Slab Waveguide on Silicon

被引：0

作者：

Huang, Yin-Pu ^{[1
]}

Wu, Bo-Rui ^{[1
]}

Jheng, Yue-Tong ^{[1
]}

Chang, Guo-En ^{[1
]}

机构：

[1] Natl Chung Cheng Univ, Grad Inst Optomechatron & Adv Inst Mfg High Tech, Chiayi, Taiwan

来源：

2024 IEEE SILICON PHOTONICS CONFERENCE, SIPHOTONICS | 2024年

关键词：

GeSn alloys; lasers; silicon photonics; infrared; LASERS;

D O I：

10.1109/SiPhotonics60897.2024.10544033

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present an optically-pumped GeSn slab waveguide laser directly integrated on silicon substrates. Our laser design uses a Si ridge structure on the GeSn active layer to support guiding modes and achieve excel optical confinement. Lasing action was achieved under optical pumping up to T=90 K with an emission wavelength of 2254 nm and a threshold of 170 kW/cm(2).

引用

页数：2