We present an optically-pumped GeSn slab waveguide laser directly integrated on silicon substrates. Our laser design uses a Si ridge structure on the GeSn active layer to support guiding modes and achieve excel optical confinement. Lasing action was achieved under optical pumping up to T=90 K with an emission wavelength of 2254 nm and a threshold of 170 kW/cm(2).
机构:
S China Normal Univ, Lab Nanophoton Funct Mat & Devices, Guangzhou 510631, Guangdong, Peoples R China
S China Normal Univ, Inst Optoelect Mat & Technol, Guangzhou 510631, Guangdong, Peoples R ChinaS China Normal Univ, Lab Nanophoton Funct Mat & Devices, Guangzhou 510631, Guangdong, Peoples R China
机构:
S China Normal Univ, Lab Nanophoton Funct Mat & Devices, Guangzhou 510631, Guangdong, Peoples R China
S China Normal Univ, Inst Optoelect Mat & Technol, Guangzhou 510631, Guangdong, Peoples R ChinaS China Normal Univ, Lab Nanophoton Funct Mat & Devices, Guangzhou 510631, Guangdong, Peoples R China