Impact of Spontaneous Orientational Polarization on Triplet-Triplet Upconversion-Based Blue Organic Light-Emitting Diodes

被引:1
作者
Kakumachi, Shunta [1 ]
Nakanotani, Hajime [1 ,2 ]
Nagasaki, Yuto [1 ]
Adachi, Chihaya [1 ,2 ]
机构
[1] Kyushu Univ, Ctr Organ Photon & Elect Res OPERA, Fukuoka 8190395, Japan
[2] Kyushu Univ, Int Inst Carbon Neutral Energy Res I2CNER, Fukuoka 8190395, Japan
基金
日本学术振兴会;
关键词
triplet-tripletupconversion; spontaneous orientationpolarization; organic light-emitting diodes; electrontransport layer; carrier recombination zone;
D O I
10.1021/acsami.4c02821
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The spontaneous orientation polarization (SOP) of a permanent dipole moment of the molecule induces a giant surface potential (GSP) in an organic semiconductor film, and GSP is expected to be a crucial parameter for understanding the operational mechanism of organic light-emitting diodes (OLEDs). This study demonstrates that the voltage-dependent migration of a carrier recombination zone induced by a polar electron transporting layer (ETL) having a positive SOP causes a decline in the overall performance of the OLED in triplet-triplet upconversion (TTU) based on OLEDs. Specifically, the TTU efficiency in an OLED with 2,2 ',2 ''-(1,3,5-benzinetriyl)-tris(1-phenyl-1-H-benzimidazole) (TPBi) as the ETL decreased by 20% due to the reduction of electrically generated triplet exciton density. This decrease resulted in a lower external electroluminescence (EL) quantum efficiency (EQE) of 5.4% at 1 mA cm(-2), while the OLED with a nonpolar ETL resulted in an EQE of around 8.1% at 1 mA cm(-2). We confirmed a shift in the recombination zone from the current density dependence of the EL spectra in the OLEDs. Our results indicate that the fixed carrier recombination zone near a hole transport layer and an emitting layer (HTL/EML) strongly enhanced the TTU process, while the polar EML/ETL interface induced the migration of the recombination zone depending on voltage, resulting in the decrease of triplet exciton density.
引用
收藏
页码:31392 / 31398
页数:7
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