Atomic layer deposition of Y2 O3 as high-k dielectrics by using a heteroleptic yttrium precursor and water

Atomic layer deposition (ALD) of Y 2 O 3 thin films was performed on Si substrate by pulsing an unconventional heteroleptic yttrium precursor Y(MeCp) 2 (Me 2 Pz) and H 2 O alternatively. The thin film grew 0.26 - 0.28 & Aring; per cycle at relatively low temperature of 195 - 225 degrees C in a self-limiting manner with negligible nucleation delay, and is close to stoichiometric (O/Y = 1.48, C, 2.56 at%; N, 1.81 at%) in as-deposited form. Integration of the postannealed ALD Y 2 O 3 film in a metal oxide semiconductor (MOS) capacitor structure exhibits representative electrical properties including a high dielectric constant k of 11.4, high electrical breakdown field of 6.1 MV cm - 1 and low leakage current density of 9.1 x 10 -8 A cm - 2 at - 2 MV cm - 1 .