Influence of the electron transport layer coating technique on sputter damage and its curing in inverted semi-transparent perovskite solar cells without protective buffer layer

In semi-transparent perovskite solar cells (PSCs) comprising a sputtered top electrode, the minimisation of detrimental sputter damage and/or its curing by post-processing treatment is essential to reach high efficiencies. In this work, we investigate the influence of sputter damage and post-deposition annealing steps for different electron transport layers (ETLs) in PSCs without the need of a protective buffer layer such as tin oxide deposited by atomic layer deposition. We compare solution-processed 6,6-Phenyl C61 butyric acid methyl ester (PCBM) to thermally evaporated C-60, each in combination with a bathocuproine (BCP) layer deposited by spin coating or thermal evaporation including a thickness variation. In general, we find that C-60 is more resilient against sputter damage and thus C-60-based cells show higher as-grown power conversion efficiencies (PCEs). Post-deposition annealing of the complete cell stack increases the PCE further to values > 16 % on 0.5 cm(2) active area. However, we observe that the remaining solvent in the spin-coated PCBM layer is highly beneficial for the curing of the sputter damage during post-deposition annealing and we achieve even higher PCEs for cells incorporating solution-processed PCBM with up to > 18 % on 0.5 cm(2). We show an alternative way to reach high efficiency semi-transparent perovskite solar cells without using thermally evaporated C-60 and/or a buffer layer like tin oxide deposited by atomic layer deposition (ALD).