Properties investigation of ZnS/porous silicon heterojunction for gas sensing

被引：1

作者：

Ameen, F. B. Mohammed ^{[1
]}

Younus, M. H. ^{[1
]}

Ali, G. G. ^{[1
]}

机构：

[1] Univ Mosul, Coll Educ Pure Sci, Phys Dept, Mosul, Iraq

来源：

CHALCOGENIDE LETTERS | 2024年 / 21卷 / 04期

关键词：

ZnS; Porous silicon; SEM; XRD; Gas sensor; POROUS SILICON; OPTICAL-PROPERTIES; FABRICATION; TIME;

D O I：

10.15251/CL.2024.214.343

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this work, the gas sensing properties of ZnS/Porous silicon heterostructures have been investigated. . Zinc sulfide(ZnS) with high gas sensing performance is successfully synthesized over the Porous silicon substrate by the spray pyrolysis method. The properties of the as -prepared samples were characterized X-ray diffraction (XRD), scanning electron microscope (SEM), Fourier transform spectrum (FTIR) and optical properties. The results reveal that the properties of the ZnS/Porous silicon heterostructures enhanced when the when the ZnS concentration is increased. The performance ZnS/Porous silicon as a gas -sensing show that the maximum sensitivity is found to be 5.11 at ZnS concentration of 0.5 M and etching time of 15 min compared to the other sensitivities. The ZnS-PSi heterojunction based gas sensor may be used for UV -light photo -detectors due to a valuable properties such as high sensitivity and fast response.

引用

页码：343 / 354

页数：12