Investigation of silicon nitride for spacer via plasma-enhanced atomic layer deposition using a ( tert-butylamino)dimethylsilane precursor
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Park, Chae-Yeon
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Hanyang Univ, Div Mat Sci & Engn, 222 Wangsimni Ro, Seoul 04763, South KoreaHanyang Univ, Div Mat Sci & Engn, 222 Wangsimni Ro, Seoul 04763, South Korea
Park, Chae-Yeon
[1
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Yang, Hae Lin
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Hanyang Univ, Div Mat Sci & Engn, 222 Wangsimni Ro, Seoul 04763, South KoreaHanyang Univ, Div Mat Sci & Engn, 222 Wangsimni Ro, Seoul 04763, South Korea
Yang, Hae Lin
[1
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Kim, Hye-Mi
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Hanyang Univ, Div Mat Sci & Engn, 222 Wangsimni Ro, Seoul 04763, South KoreaHanyang Univ, Div Mat Sci & Engn, 222 Wangsimni Ro, Seoul 04763, South Korea
Kim, Hye-Mi
[1
]
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Kim, Daejung
[2
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Park, Yongjoo
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Sk Trichem Co Ltd, 110-5 Myeonghaksandan Ro, Sejong Si, South KoreaHanyang Univ, Div Mat Sci & Engn, 222 Wangsimni Ro, Seoul 04763, South Korea
Park, Yongjoo
[3
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Park, Jongruyl
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Sk Trichem Co Ltd, 110-5 Myeonghaksandan Ro, Sejong Si, South KoreaHanyang Univ, Div Mat Sci & Engn, 222 Wangsimni Ro, Seoul 04763, South Korea
Park, Jongruyl
[3
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Shin, Seokhee
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Sk Trichem Co Ltd, 110-5 Myeonghaksandan Ro, Sejong Si, South KoreaHanyang Univ, Div Mat Sci & Engn, 222 Wangsimni Ro, Seoul 04763, South Korea
Shin, Seokhee
[3
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Park, Jin-Seong
[1
,2
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[1] Hanyang Univ, Div Mat Sci & Engn, 222 Wangsimni Ro, Seoul 04763, South Korea
[2] Hanyang Univ, Dept Display Sci & Engn, 222 Wangsimni Ro, Seoul 04763, South Korea
[3] Sk Trichem Co Ltd, 110-5 Myeonghaksandan Ro, Sejong Si, South Korea
Silicon nitride (SiNx) has attracted considerable attention as a spacer in advanced semiconductor devices, owing to its superior barrier performance. However, the fabrication of SiNx films remains challenging, because of the corrosive byproducts generated when using chlorine precursors and impurities associated with the redeposition species of precursor ligands. The selection of precursor and optimization of the process parameters influence the film growth and improve the film properties. In this study, the (tert-butylamino)dimethylsilane (TBADMS) precursor and N2 plasma were introduced for the first time by plasma-enhanced atomic layer deposition (PEALD) to deposit SiNx films. We attempted to improve the film properties by adjusting the substrate temperature and investigated different growth mechanisms. The film deposited at 300 degrees C exhibited the most superior film properties, with an N/Si ratio close to ideal Si3N4, high film density, smooth surface, and low wet etch rate. The proposed growth mechanism demonstrates the influence of the initial surfaces and residual redeposition species removal within the film. Additionally, dielectric characterization indicates that films deposited at a higher temperature exhibit enhanced dielectric constant and reduced hysteresis (k = 7.2, Delta V = 0.6 V) in comparison to those (k = 4.9, Delta V = 1.2 V) deposited at lower temperature.
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Korea Res Inst Chem Technol, Chem Mat Solut Ctr, Daejeon 34114, South KoreaKorea Res Inst Chem Technol, Chem Mat Solut Ctr, Daejeon 34114, South Korea
Cho, Tae-Yeon
Lee, Won-Jae
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Seoul Natl Univ Sci & Technol, Dept Mfg Syst & Design Engn, Seoul 139743, South KoreaKorea Res Inst Chem Technol, Chem Mat Solut Ctr, Daejeon 34114, South Korea
Lee, Won-Jae
Lee, Sang-Jin
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Korea Res Inst Chem Technol, Chem Mat Solut Ctr, Daejeon 34114, South KoreaKorea Res Inst Chem Technol, Chem Mat Solut Ctr, Daejeon 34114, South Korea
Lee, Sang-Jin
Lee, Jae-Heung
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Korea Res Inst Chem Technol, Chem Mat Solut Ctr, Daejeon 34114, South KoreaKorea Res Inst Chem Technol, Chem Mat Solut Ctr, Daejeon 34114, South Korea
Lee, Jae-Heung
Ryu, Juwhan
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Chungnam Natl Univ, Dept Polymer Sci & Engn, Daejeon 34134, South KoreaKorea Res Inst Chem Technol, Chem Mat Solut Ctr, Daejeon 34114, South Korea
Ryu, Juwhan
Cho, Seong-Keun
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Korea Res Inst Chem Technol, Chem Mat Solut Ctr, Daejeon 34114, South KoreaKorea Res Inst Chem Technol, Chem Mat Solut Ctr, Daejeon 34114, South Korea
Cho, Seong-Keun
Choa, Sung-Hoon
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Seoul Natl Univ Sci & Technol, Grad Sch NID Fus Technol, Seoul 139743, South KoreaKorea Res Inst Chem Technol, Chem Mat Solut Ctr, Daejeon 34114, South Korea
机构:
Univ Calif Los Angeles, Dept Chem & Biomol Engn, Los Angeles, CA 90095 USAUniv Calif Los Angeles, Dept Chem & Biomol Engn, Los Angeles, CA 90095 USA
Choi, J. H.
Mao, Y.
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Univ Calif Los Angeles, Dept Chem & Biomol Engn, Los Angeles, CA 90095 USAUniv Calif Los Angeles, Dept Chem & Biomol Engn, Los Angeles, CA 90095 USA
Mao, Y.
Chang, J. P.
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Univ Calif Los Angeles, Dept Chem & Biomol Engn, Los Angeles, CA 90095 USAUniv Calif Los Angeles, Dept Chem & Biomol Engn, Los Angeles, CA 90095 USA
机构:
Korea Res Inst Chem Technol, Chem Mat Solut Ctr, Daejeon 34114, South KoreaKorea Res Inst Chem Technol, Chem Mat Solut Ctr, Daejeon 34114, South Korea
Cho, Tae-Yeon
Lee, Won-Jae
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h-index: 0
机构:
Seoul Natl Univ Sci & Technol, Dept Mfg Syst & Design Engn, Seoul 139743, South KoreaKorea Res Inst Chem Technol, Chem Mat Solut Ctr, Daejeon 34114, South Korea
Lee, Won-Jae
Lee, Sang-Jin
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h-index: 0
机构:
Korea Res Inst Chem Technol, Chem Mat Solut Ctr, Daejeon 34114, South KoreaKorea Res Inst Chem Technol, Chem Mat Solut Ctr, Daejeon 34114, South Korea
Lee, Sang-Jin
Lee, Jae-Heung
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机构:
Korea Res Inst Chem Technol, Chem Mat Solut Ctr, Daejeon 34114, South KoreaKorea Res Inst Chem Technol, Chem Mat Solut Ctr, Daejeon 34114, South Korea
Lee, Jae-Heung
Ryu, Juwhan
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h-index: 0
机构:
Chungnam Natl Univ, Dept Polymer Sci & Engn, Daejeon 34134, South KoreaKorea Res Inst Chem Technol, Chem Mat Solut Ctr, Daejeon 34114, South Korea
Ryu, Juwhan
Cho, Seong-Keun
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机构:
Korea Res Inst Chem Technol, Chem Mat Solut Ctr, Daejeon 34114, South KoreaKorea Res Inst Chem Technol, Chem Mat Solut Ctr, Daejeon 34114, South Korea
Cho, Seong-Keun
Choa, Sung-Hoon
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机构:
Seoul Natl Univ Sci & Technol, Grad Sch NID Fus Technol, Seoul 139743, South KoreaKorea Res Inst Chem Technol, Chem Mat Solut Ctr, Daejeon 34114, South Korea
机构:
Univ Calif Los Angeles, Dept Chem & Biomol Engn, Los Angeles, CA 90095 USAUniv Calif Los Angeles, Dept Chem & Biomol Engn, Los Angeles, CA 90095 USA
Choi, J. H.
Mao, Y.
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机构:
Univ Calif Los Angeles, Dept Chem & Biomol Engn, Los Angeles, CA 90095 USAUniv Calif Los Angeles, Dept Chem & Biomol Engn, Los Angeles, CA 90095 USA
Mao, Y.
Chang, J. P.
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Univ Calif Los Angeles, Dept Chem & Biomol Engn, Los Angeles, CA 90095 USAUniv Calif Los Angeles, Dept Chem & Biomol Engn, Los Angeles, CA 90095 USA