Half metallic ferromagnetic and transport behavior of rare earth based CdGd2(S/Se)4 spinels

被引:0
|
作者
Mustafa, Ghulam M. [1 ]
Younas, Bisma [2 ]
Saba, Sadaf [3 ]
Noor, N. A. [4 ]
Saeed, Yasir [5 ]
Mumtaz, Sohail [6 ]
Al-Sadoon, Mohammad K. [7 ]
机构
[1] Univ Educ, Dept Phys, Div Sci & Technol, Lahore 54770, Punjab, Pakistan
[2] Dept Phys, Univ Lahore, Lahore, Pakistan
[3] Univ Punjab, Ctr Excellence Solid State Phys, Lahore, Pakistan
[4] Riphah Int Univ, Dept Phys, Lahore, Pakistan
[5] AUST Abbottabad Univ Sci & Technol, Dept Phys, Lahore, Pakistan
[6] Kwangwoon Univ, Elect & Biol Phys, Seoul 01897, South Korea
[7] King Saud Univ, Coll Sci, Dept Zool, POB 2455, Riyadh 11451, Saudi Arabia
来源
MATERIALS TODAY COMMUNICATIONS | 2024年 / 40卷
关键词
CdGd2(S/Se)(4) Spinels; DFT; Ferromagnetism; Spin polarization; Optical properties; Thermoelectric efficiency; THERMOELECTRIC PROPERTIES; 1ST-PRINCIPLES CALCULATIONS; OPTICAL-PROPERTIES; SE; CHALCOGENIDES; TE;
D O I
10.1016/j.mtcomm.2024.109567
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Spinel chalcogen compounds have garnered significant interest in recent ages because of their promising potential in optoelectronic and thermoelectric device applications. Here, we undertake an inclusive analysis of the structural, mechanical, electronic, magnetic, optical, and transport response of CdGd2(S/Se)4 utilizing WIEN2k code based on DFT. The determination of the crystal structure's ground state and the material's thermodynamic stability is investigated through energy vs. volume plots and Delta Hf calculation. Our analysis, including Poisson (v) and Pugh (B/G) ratios, reveals the ductile nature of the studied composition. Band gap assessments are conducted using the TB-mBJ approach, revealing the semiconducting nature of investigated compounds with direct band characteristics. Specifically, calculated band gap values are 2.2 for CdGd2S4 and 1.8 eV for CdGd2Se4. Additionally, analysis of optical properties and transport response underscores the perspective of these compositions for diverse optoelectronic and thermoelectric devices.
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页数:10
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