Investigation of the Impact of Angles and Rotation of Low-Energy Protons in SRAM Cells Down to 16 nm

被引：1

作者：

Artola, L. ^{[1
]}

Glorieux, M. ^{[2
]}

Hubert, G. ^{[1
]}

Inguimbert, C. ^{[1
]}

Bonnoit, T. ^{[2
]}

Rey, R. ^{[1
]}

Lange, T. ^{[2
]}

Levacq, D. ^{[3
]}

Poivey, C. ^{[3
]}

机构：

[1] Univ Toulouse, ONERA DPHY, F-31055 Toulouse, France

[2] IROC Technol, F-38025 Grenoble, France

[3] ESA, ESTEC, NL-2200 Noordwijk, Netherlands

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2024年 / 71卷 / 04期

关键词：

Protons; Particle beams; Integrated circuit modeling; Single event upsets; SRAM cells; Performance evaluation; FinFETs; Angle impact; CMOS; FinFET; low-energy protons; radiation tests; simulation; SRAM;

D O I：

10.1109/TNS.2024.3352083

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work presents the single-event upset (SEU) responses of four SRAM devices (65, 40, 28, and 16 nm) measured at different angles of incidence and orientation of the device with respect to the low-energy proton (LEP) beam direction. Experimental data are discussed with the support of multiphysics and multiscale simulations. Difference of one order of magnitude is observed for SRAMs irradiated between the different directions the beam is entering the device. The conclusions drawn from the simulation results suggest that the difference in the SEU cross section could be attributed to the charge sharing between the n-well and p-well of the two inverters of the SRAM bit. The consequent feedback reduces the overall ionization effects in the SRAM cell when exposed to LEPs.

引用

页码：542 / 547

页数：6

共 4 条

[1] SEFI Modeling in Readout Integrated Circuit Induced by Heavy Ions at Cryogenic Temperatures
Artola, L.
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[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 66 (01) : 452 - 457
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[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2015, 62 (06) : 2837 - 2845
[3] Single-Event Transient Modeling in a 65-nm Bulk CMOS Technology Based on Multi-Physical Approach and Electrical Simulations
Hubert, Guillaume
Artola, Laurent
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2013, 60 (06) : 4421 - 4429
[4] Low-energy proton-induced single-event-upsets in 65 nm node, silicon-on-insulator, latches and memory cells
Rodbell, Kenneth P.
Heidel, David F.
Tang, Henry H. K.
Gordon, Michael S.
Oldiges, Phil
Murray, Conal E.
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2007, 54 (06) : 2474 - 2479

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