Improvements in thermoelectric features by resonant-tunneling magnetic tunnel junctions with β-Ga2O3 semiconductor

被引：0
|
作者：
Ghobadi, Nader [1 ]
Daqiq, Reza [1 ]
机构：
[1] Malayer Univ, Fac Sci, Phys Dept, Malayer, Iran
来源：
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2024年 / 600卷
关键词：
Thermoelectric effects; Resonant -tunneling magnetic tunnel junctions; beta-Ga (2) O (3); ENHANCEMENT; FILMS;
D O I：
10.1016/j.jmmm.2024.172161
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A study was conducted to investigate thermoelectric effects (TEEs) in resonant-tunneling magnetic tunnel junctions (RTMTJs) featuring wide-bandgap semiconductors such as ZnO and beta-Ga2O3, along with a nonmagnetic metal spacer. The transmission function was determined using the non-equilibrium Green's function method within a tight-binding model. Significant enhancements in TEEs were observed for the beta-Ga2O3 semiconductor compared to other materials, indicating its potential applicability in the emerging field of beta-Ga2O3 spincaloritronics.
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页数：6
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