Improvements in thermoelectric features by resonant-tunneling magnetic tunnel junctions with β-Ga2O3 semiconductor

被引：0
|
作者：
Ghobadi, Nader [1 ]
Daqiq, Reza [1 ]
机构：
[1] Malayer Univ, Fac Sci, Phys Dept, Malayer, Iran
来源：
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2024年 / 600卷
关键词：
Thermoelectric effects; Resonant -tunneling magnetic tunnel junctions; beta-Ga (2) O (3); ENHANCEMENT; FILMS;
D O I：
10.1016/j.jmmm.2024.172161
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A study was conducted to investigate thermoelectric effects (TEEs) in resonant-tunneling magnetic tunnel junctions (RTMTJs) featuring wide-bandgap semiconductors such as ZnO and beta-Ga2O3, along with a nonmagnetic metal spacer. The transmission function was determined using the non-equilibrium Green's function method within a tight-binding model. Significant enhancements in TEEs were observed for the beta-Ga2O3 semiconductor compared to other materials, indicating its potential applicability in the emerging field of beta-Ga2O3 spincaloritronics.
引用
收藏
页数：6
相关论文
共 50 条
  • [1] Resonant tunneling in magnetic semiconductor tunnel junctions with arbitrary magnetic alignments
    Shen, J.
    Tao, Y. C.
    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2011, 323 (06) : 717 - 722
  • [2] Giant tunneling resistance and robust switching behavior in ferroelectric tunnel junctions of WS2/Ga2O3 heterostructures: The influence of metal-semiconductor contacts
    Wei, Dong
    Guo, Gaofu
    Yu, Heng
    Li, Yi
    Ma, Yaqiang
    Tang, Yanan
    Feng, Zhen
    Dai, Xianqi
    JOURNAL OF APPLIED PHYSICS, 2024, 136 (07)
  • [3] Band-pass magnetic tunnel junctions with ?-Ga2O3 semiconductors for spin-filtering goals
    Ghobadi, Nader
    Daqiq, Reza
    Mirebrahimi, Seyyed Mehdi
    MICRO AND NANOSTRUCTURES, 2022, 169
  • [4] IMPROVEMENTS IN GA2O3 SENSORS FOR REDUCING GASES
    FLEISCHER, M
    MEIXNER, H
    SENSORS AND ACTUATORS B-CHEMICAL, 1993, 13 (1-3) : 259 - 263
  • [5] Improvements in Ga2O3 sensors for reducing gases
    Fleischer, M.
    Meixner, H.
    Sensors and Actuators, B: Chemical, 1993, B13 (1 -3 pt 1) : 259 - 263
  • [6] QUANTUM STATE CONTROL IN SEMICONDUCTOR PN JUNCTIONS .3. COULOMB BLOCKADE OF RESONANT-TUNNELING IN PN MICROJUNCTIONS
    IMAMOGLU, A
    YAMAMOTO, Y
    INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 1993, 7 (11): : 2065 - 2083
  • [7] Influence of an Atom in EGaIn/Ga2O3 Tunneling Junctions Comprising Self-Assembled Monolayers
    Fracasso, Davide
    Muglali, Mutlu Iskender
    Rohwerder, Michael
    Terfort, Andreas
    Chiechi, Ryan C.
    JOURNAL OF PHYSICAL CHEMISTRY C, 2013, 117 (21): : 11367 - 11376
  • [8] Ga2O3 and GaN semiconductor hollow spheres
    Sun, XM
    Li, YD
    ANGEWANDTE CHEMIE-INTERNATIONAL EDITION, 2004, 43 (29) : 3827 - 3831
  • [9] Preparation of β-Ga2O3/ε-Ga2O3 type II phase junctions by atmospheric pressure chemical vapor deposition
    Li, Xianxu
    Niu, Jiale
    Bai, Lijian
    Jing, Xue
    Gao, Dongwen
    Deng, Jiajun
    Lu, Fangchao
    Wang, Wenjie
    CERAMICS INTERNATIONAL, 2025, 51 (08) : 10395 - 10401
  • [10] Layer-number parity-dependent oscillatory spin transport in <bold>β</bold>-Ga2O3 magnetic tunnel junctions
    Yan, Sihan
    Liu, Zeng
    Li, Shan
    Tan, Chee-Keong
    Zhang, Jia-Han
    Guo, Yufeng
    Tang, Weihua
    APPLIED PHYSICS LETTERS, 2024, 124 (15)
12345