Crystallization management and defect passivation via additive engineering for efficient and stable carbon-based CsPbI2Br perovskite solar cells

被引:7
作者
Zhang, Yaping [1 ]
Wang, Yanan [1 ]
Chen, Jing [1 ]
Peng, Lin [1 ]
Liu, Xiaolin [1 ]
Lin, Jia [1 ]
机构
[1] Shanghai Univ Elect Power, Dept Phys, Shanghai 200090, Peoples R China
基金
中国国家自然科学基金;
关键词
Crystallization management; Defect passivation; Carbon -based CsPbI2Br PSCs; Additive; Stability; OPEN-CIRCUIT VOLTAGE; FILL FACTOR; PERFORMANCE; TRANSPORT;
D O I
10.1016/j.jpowsour.2024.234702
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Inorganic CsPbI2Br perovskite solar cells (PSCs) have attracted enormous interest due to their excellent thermal stability and immense potential for application in tandem solar cells. However, the rambunctious crystallization and poor film quality of inorganic CsPbI2Br perovskite are the main factors limiting their performance improvement. Herein, dibenzoylmethane (DBM), containing electron-rich and dual C--O functional groups, as an efficient precursor additive, is first introduced to regulate the crystallization of CsPbI2Br perovskite while passivating its associated defects. After DBM modification, nucleation is accelerated and the crystallinity of CsPbI2Br film is improved, thus promoting the phase stability. Additionally, DBM can passivate uncoordinated Pb2+ defects, thereby significantly reducing non-radiative recombination, and can also decrease the energy level difference between CsPbI2Br/Carbon. As a result, when DBM additive is incorporated in the CsPbI2Br, the power conversion efficiency (PCE) of the device with the fluorine doped tin oxide glass (FTO)/SnO2/CsPbI2Br/Carbon structure is significantly improved to 13.46 %, an increase of nearly 13 % compared to the control device (11.72 %). The unpackaged devices exhibit excellent air and thermal stability, still remaining over 90 % of its initial PCE after aging for 500 h under ambient conditions, or continuous heating at 65 degrees C in glovebox for 500 h, respectively.
引用
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页数:8
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