Magnetic Field Simulation and Measurement of MMC Submodule under Dual Pulse Test

被引:0
|
作者
Li, Hailin [1 ,2 ,3 ]
Chang, Zhongting [1 ]
Wang, Shuhong [3 ]
Hu, Yongjie [1 ]
Si, Zhilei [1 ]
Xia, Kepeng [1 ]
Liu, Lulu [1 ]
Liu, Kun [1 ]
机构
[1] XJ Elect Co Ltd, Xuchang, Peoples R China
[2] Zhengzhou Univ Light Ind, Collge Elect & Informat Engn, Zhengzhou, Peoples R China
[3] Xi An Jiao Tong Univ, Sch Elect Engn, Xian, Peoples R China
来源
2024 IEEE 21ST BIENNIAL CONFERENCE ON ELECTROMAGNETIC FIELD COMPUTATION, CEFC 2024 | 2024年
关键词
Dual pulse test; FEM; IGBTs; MMC Submodule; pulse magnetic field;
D O I
10.1109/CEFC61729.2024.10585610
中图分类号
TP39 [计算机的应用];
学科分类号
081203 ; 0835 ;
摘要
Modular multilevel converter(MMC) is widely applied to the UHVDC power transmission system for its advantages of bidirectional power transmission, power qualities, and flexible controls. With a large number of insulated gate bipolar transistors(IGBTs) utilized in MMC converter stations, an extremely complicated electromagnetic environment is generated due to the dv/dt and di/dt during the IGBT switching process. A finite element method(FEM) is adopted to calculate the dual pulse magnetic field generated by the 4.5kV/5kA IGBT MMC submodule during the dual pulse testing process. Then, a dual pulse test is conducted and the pulse magnetic field is measured to verify the simulation result. Finally, a fast Fourier transform (FFT) analysis is performed to give a comprehensive view of the switching process and its mechanism as an electromagnetic interference source.
引用
收藏
页数:2
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