III-V-on-Si Membrane Distributed Reflector Lasers with Intermixed MQW DBRs

被引：0
作者：
Takeda, Koji [1 ]
Fujii, Takuro [1 ]
Maeda, Yoshiho [1 ]
Segawa, Toru [1 ]
Matsuo, Shinji [1 ]
机构：
[1] NTT Corp, NTT Device Technol Labs, Atsugi, Kanagawa, Japan
来源：
2024 IEEE SILICON PHOTONICS CONFERENCE, SIPHOTONICS | 2024年
关键词：
III-V on Si; laser on Si; wafer bonding; distributed reflector laser;
D O I：
10.1109/SiPhotonics60897.2024.10543646
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We demonstrate distributed reflector lasers based on a III-V/Si membrane platform. The threshold current is reduced by half of that of a detuned distributed feedback laser owing to the use of quantum-well intermixed distributed Bragg reflectors; the minimum threshold current is 0.88 mA.
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页数：2
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