High-Performance PbS NCs-Graphene Phototransistor With Memory Function

被引：1
作者：
Che, Y. L. [1 ]
Cao, X. L. [1 ]
Yao, J. Q. [2 ]
机构：
[1] Shandong Univ Sci & Technol, Coll Ocean Sci & Engn, Qingdao 266590, Peoples R China
[2] Tianjin Univ, Sch Precis Instruments & Optoelect Engn, Key Lab Optoelect Informat Technol, Minist Educ, Tianjin 300072, Peoples R China
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 2024年 / 36卷 / 11期
关键词：
PbS NCs; graphene; graphene oxide; phototransistor; FIELD-EFFECT TRANSISTORS; PHOTODETECTORS; 2D;
D O I：
10.1109/LPT.2024.3397011
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A high-performance lead sulfide (PbS) NCs/ graphene hetero-junction based phototransistor was reported. The device exhibited NIR response with a responsivity of 33 A/W, detectivity of 2.2 x 10(8) Jones, external quantum efficiency of 5 x 10(3) % and fast response time of 16 ms at 808 nm under room temperature. In addition, the phototransistor exhibited good memory function by introducing graphene oxide storage layer. The mechanism of the device has been discussed using the energy band diagrams of the hetero-structured PbS NCs/graphene.
引用
收藏
页码：753 / 756
页数：4
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