Epitaxial growth and magnetic properties of Mn 5 (Si x Ge 1-x ) 3 thin films

Structural and magnetic properties of Mn 5 (Si x Ge 1-x ) 3 thin films were investigated. Ferromagnetic Mn 5 Ge 3 and anti -ferromagnetic Mn 5 Si 3 thin films have been synthesized and characterized as these compounds exhibit interesting features for the development of spintronics. Here, Mn 5 (Si x Ge 1-x ) 3 thin films were grown on Ge(111) substrates by co -deposition using molecular beam epitaxy. Crystalline thin films can be produced with controlled Si concentrations ranging from 0 to 1. The thin films were relaxed by dislocations at the interface with the substrate. A lattice parameter variation was observed as the Si content increased, which is comparable to previous works done in bulk. Reflection high-energy electron diffraction diagrams and X-ray diffraction profiles showed that lattice parameters a and c are shrinking and that the surface roughness and crystallinity degrade as the Si amount increases. Magnetometric measurements revealed a ferromagnetic behavior for all Si concentrations. The measured average ferromagnetic moment per manganese atom decreased from 2.33 to 0.05 mu B /Mn atom. No ferro to anti -ferromagnetic transition was observed contrary to the bulk Mn 5 (Si x Ge 1-x ) 3 compound.