Temperature Dependence of Thermal Conductivity for Low-κ Dielectric Materials

Aggressive scaling and adopting low-kappa dielectric materials pose significant challenges for advanced interconnects for process, thermal, and electromigration solutions. Based on Fourier heat conduction law and non-equilibrium molecular dynamics, the heat conduction process of low-. SiCOH materials is simulated. The molecular model of SiCOH was established by the melt-quench approach. By applying a specified heat flow between the heat and cold sources, the steady-state temperature distribution is counted, and the temperature gradient is fitted. The results show that when the non-equilibrium steady state is reached, the temperature distribution along the heat flow direction shows an approximate monotonic decreasing trend. According to Fourier's law, the thermal conductivity of SiCOH at the ambient temperature is 0.177W/m.K, which is in accordance with the outcomes of the experiments. Moreover, the heat conductivity of interlayer dielectric material SiCOH is significantly temperature-dependent. The thermal conductivity of 700K has decreased twice as against 300K.