Physics-Based Core Compact Model of 2D MoS2 FET Considering Fermi-Dirac Statistics

被引：0

作者：

Sarker, Swapna ^{[1
]}

Garg, Ankur ^{[1
]}

Ranjan, Prabhat ^{[1
]}

Kumar, Abhishek ^{[1
]}

Dasgupta, Avirup ^{[1
]}

机构：

[1] IIT Roorkee, Roorkee, Uttarakhand, India

来源：

8TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE, EDTM 2024 | 2024年

关键词：

2D; TMD; Fermi-Dirac Statistics; ATK; DFT; Compact Model;

D O I：

10.1109/EDTM58488.2024.10511512

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper, we present a physics-based core compact model for two-dimensional (2D) molybdenum disulfide (MoS2) channel material-based FET. The FET characteristics have been studies using ab-initio simulations as well as experimental data. The model is derived from closed-form solutions of Poisson's equation considering 2D density of states and Fermi-Dirac statistics along with drift-diffusion transport model. The proposed model has been implemented in Verilog-A and validated with ab-initio simulations and experimental data.

引用

页码：67 / 69

页数：3

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