Enhancing interfacial thermal conductivity of copper-carbon nanotube array composite via metallic bonding: Molecular dynamics simulations

被引:2
|
作者
Wang, Xin [1 ]
Wang, Xueliang [2 ,4 ]
Tong, Yigang [3 ]
Wang, Yaping [3 ]
机构
[1] Weinan Normal Univ, Sch Phys & Elect Engn, Weinan 714099, Shaanxi, Peoples R China
[2] Xi An Jiao Tong Univ, Sch Energy & Power Engn, MOE Key Lab Thermofluid Sci & Engn, Xian 710049, Shaanxi, Peoples R China
[3] Xi An Jiao Tong Univ, Sch Sci, MOE Key Lab Nonequilibrium Synth & Modulat Condens, Xian 710049, Shaanxi, Peoples R China
[4] 28 Xianning West Rd, Xian 710049, Shaanxi, Peoples R China
关键词
Interfacial thermal conduction; Cu-VACNT interface; Interfacial interaction; Molecular dynamic; Chemical bonding; TRANSPORT; FUNCTIONALIZATION; CONDUCTANCE;
D O I
10.1016/j.chemphys.2024.112341
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
In this work, a novel strategy for improving the interface thermal conductivity (ITC) between the vertically aligned carbon nanotube (VACNT) arrays and copper was proposed and verified using the non-equilibrium molecular dynamics (NEMD) simulations. The introduced metal elements (Ag, Al, Ti, and Ni) enhanced the ITC of the Cu-VACNT interface region via a strong adhesive force. Notably, different from the physisorption between Ag/Al elements and VACNT, a strong interfacial interaction was introduced between the chemically bonded Ni/Ti and VACNT. In addition, the matching degree of the phonon state density (PDOS) at the Ni-VACNT interface increases with increasing contact area between the Ni atoms and Cu substrate. Nevertheless, it was found that over-strong interfacial interaction between the VACNT and Ti element deteriorates the matching degree of high-frequency phonons at the Ti-VACNT interface. These findings offer valuable criteria for designing and selecting materials to enhance interfacial thermal conduction in composite electronic packaging.
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页数:8
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