Charge carrier motion and Mn-spin coupling defining the transport behaviors and the magnetic order at DySrCaMnO3 polycrystalline ceramic

被引:1
作者
Smari, Mourad [1 ]
Moualhi, Youssef [2 ]
Hamdi, Riheb [3 ]
Rahmouni, Hedi [2 ]
Haik, Yousef [4 ,5 ]
机构
[1] Univ Sharjah, Res Inst Sci & Engn, Ctr Adv Mat Res, POB 27272, Sharjah, U Arab Emirates
[2] Univ Kairouan, Inst Super Sci Appl & Technol Kasserine, Lab Rech Mat Avances & Nanotechnol LRMAN, BP 471, Kasserine 1200, Tunisia
[3] Hamad Bin Khalifa Univ, Qatar Fdn, Coll Sci & Engn, Doha, Qatar
[4] Univ Sharjah, Dept Mech & Nucl Engn, POB 27272, Sharjah, U Arab Emirates
[5] Univ Jordan, Dept Mech Engn, Amman, Jordan
关键词
Sol -gel processes; Spectroscopy; Thermal conductivity; Alkaline earth oxides; Summerfield scaling; Functional applications; CONDUCTIVITY SPECTRA; ELECTRICAL-CONDUCTIVITY; MAGNETOCALORIC PROPERTIES; DIELECTRIC-RELAXATION; SCALING PROPERTIES; IONIC GLASSES; INFORMATION; MANGANITES; DEPENDENCE; DISPERSION;
D O I
10.1016/j.mssp.2024.108608
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The Ca-doped Dy0.5Sr0.5MnO3 manganite was synthesized using the Sol-Gel technique. The material demonstrates semiconducting behavior across a wide range of temperatures. This behavior could be attributed to the involvement of small polaron hopping, Shklovskii-Efros variable range hopping, and Mott-variable range hopping mechanisms. The Shimakawa Model is used in the intermediate temperature range to verify the existence of multiphonons in the compound. The conductance spectra adhere to the Jonscher power law and can be elucidated by the utilization of the Jump relaxation model. The manganite structure deviated from Summerfield scaling, indicating that numerous crystalline-ordered materials possess unexplored conduction and relaxation mechanisms, unlike amorphous systems. Magnetic anomalies at around 6K were observed, indicating antiferromagnetic (AFM) interactions between Dy-Dy pairs. Another anomaly occurs at approximately 40K, indicating AFM coupling between Mn-spins.
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页数:10
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