Synthesis, atomic structure and electronic properties of ferroelectric AgBiP2Se6 ultrathin flakes

被引:1
|
作者
Lv, Shaozhen [1 ]
Wang, Jingyi [2 ]
Wei, Bin [2 ]
Wang, Zhongchang [2 ]
机构
[1] Fujian Univ Technol, Sch Elect Elect Engn & Phys, Fuzhou 350117, Peoples R China
[2] Int Iberian Nanotechnol Lab INL, Dept Quantum Mat Sci & Technol, Ave Mestre Jose Veiga S-N, P-4715330 Braga, Portugal
基金
中国国家自然科学基金;
关键词
2D ferroelectric material; AgBiP2Se6; Atomic structure; SPECTROSCOPY; CUBIP2SE6; CUINP2S6; RAMAN;
D O I
10.1016/j.jallcom.2024.174803
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Layered transition metal thiophosphate ABP2X6(A = Ag or Cu, B = V, Cr, In or Bi, X = S or Se) as a promising 2D ferroelectric material, has attracted great attention nowadays. In this work, ultrathin AgBiP2Se6 sheets down to 6 nm were synthesized for the first time. Atomic force microscopy, double spherical aberration scanning TEM and Raman spectra were performed to investigate the morphology, atomic structure and vibration modes of the samples. The first-principles calculations utilizing density-functional theory(DFT) were also used to analyze the electronic properties, band structures and projected density of states (PDOS) for both ferroelectric (FE) and paraelectric(PE) states of AgBiP2Se6 monolayer.
引用
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页数:6
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