Structural evolution and thermoelectric performance in (GeT e) m (Sb 2 Te 3 ) n compounds

被引:7
作者
Chen, Shuo [1 ]
Liu, Keke [1 ]
Luo, Tingting [1 ]
Liao, Lin [1 ]
Yang, Zhen [1 ]
Zhong, Shenlong [1 ]
Wu, Jinsong [1 ]
Su, Xianli [1 ]
Poudeu, Pierre Ferdinand Poudeu [2 ]
Zhang, Qingjie [1 ]
Tang, Xinfeng [1 ]
机构
[1] Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China
[2] Univ Michigan, Dept Mat Sci & Engn, Lab Emerging Energy & Elect Mat LE3M, Ann Arbor, MI 48109 USA
关键词
Thermoelectric; (GeTe)m(Sb2Te3)n compounds; Van der Waals gaps; Low lattice thermal conductivity; Anisotropy of Seebeck coefficient; LATTICE-DYNAMICS; BAND CONVERGENCE; GETE; PBTE;
D O I
10.1016/j.mtphys.2024.101455
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Exploring the relationship between crystal structure and thermoelectric performance is a pivotal topic in the thermoelectric field. In this study, we have comprehensively investigated the correlation between the structural evolution of (GeTe) m (Sb 2 Te 3 ) n pseudo-binary system and the thermoelectric properties. The proportion of van der Waals bonds increases with the rising Sb 2 Te 3 content, resulting in an increase in the anisotropy of the electrical conductivity and a decrease in the average sound velocity. Additionally, the cation sites in the crystal lattice of these compounds exhibit a mixed occupancy of Ge/Sb atoms, although the cation sites adjacent to the van der Waals gaps are predominantly occupied by Sb atoms. The ultra-low lattice thermal conductivity of the GST124 and GST147 compounds is mainly attributed to the high concentration of van der Waals bonds and enhanced phonon scattering arising from Ge/Sb mixed cation occupancy and high density of defect structures. The high electrical conductivity combined with the low lattice thermal conductivity enables GST124 and GST147 compounds to achieve a maximum ZT value of 0.56 and 0.57, respectively. Higher thermoelectric performance can be achieved through optimization of the microstructure as well as the carrier concentration.
引用
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页数:9
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