Electrically injected InGaN microdisk lasers: A review of progress, challenges, and future prospects

被引：2

作者：

Fu, Wai Yuen ^{[1
]}

Choi, Hoi Wai ^{[1
]}

机构：

[1] Univ Hong Kong, Dept Elect & Elect Engn, Pokfulam Rd, Hong Kong 999077, Peoples R China

来源：

PROGRESS IN QUANTUM ELECTRONICS | 2024年 / 95卷

关键词：

InGaN; Microdisk; Laser; Electroluminescence; Whispering gallery mode; WHISPERING-GALLERY MODES; LIGHT-EMITTING-DIODES; III-NITRIDE; STIMULATED-EMISSION; OPTICAL-PROPERTIES; GAN MICRODISK; QUANTUM DOTS; WAVE-GUIDE; MICROCAVITY; FABRICATION;

D O I：

10.1016/j.pquantelec.2024.100516

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The minimalistic design of InGaN-based MQW microdisk lasers based on whispering gallery mode (WGM) resonances has been attracting research interests in recent years. To compete with the prevalent InGaN-based VCSELs and edge-emitters, microdisk lasers must demonstrate superior performance under electrical injection. Yet, the challenges in the shift from initial optically pumped investigations to studies centered on electrically injected microdisk lasers has posed a barrier to successful commercialization.

引用

页数：16

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