Large enhanced thermal stability of perpendicular magnetic anisotropy films in magnetic tunnel junctions

被引:0
|
作者
Du, Wei [1 ,2 ]
Wang, Lei [2 ,3 ]
Zhong, Yibing [2 ,3 ]
Xu, Tao [2 ]
Guan, Yehui [2 ]
Liu, Xiaoqi [2 ]
Ren, Shupeng [2 ]
Cheng, Yu [2 ]
Tang, Xiaoli [1 ]
机构
[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Device, Chengdu 610054, Peoples R China
[2] China Aerosp Sci & Technol Corp, 5 Acad 513 Inst, Yantai 264003, Peoples R China
[3] Shandong Huayu Aerosp Technol Co Ltd, Yantai 264003, Peoples R China
基金
中国国家自然科学基金;
关键词
Perpendicular magnetic anisotropy; Operation stability; Magnetic device; Spin-orbit torque; RANDOM-ACCESS MEMORY; SPIN-ORBIT; MRAM; SOT;
D O I
暂无
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
For magnetic sensor and magnetic random access memory, the thermally tolerant need to be improved at a relatively high operation temperature. In this work, the correlations between the thermal stability and perpendicular magnetic anisotropy films with different heavy metal layers, structures and CoFeB compositions were investigated in details. It was found that the thin films adopting W or Mo heavy metal layer in the bottom structure, and the thin films adopting Mo heavy metal layer in the top structure exhibit a relatively good operation stability, no matter what the CoFeB composition is. Moreover, the thermally robust perpendicular magnetic anisotropy was obtained in the CoFeB with a relatively large Co atomic composition. According to the element distribution states analysis and oxidation conditions at CoFeB/MgO interface, the reasons are attributed to the structural- and composition-dependent Fe-O bonding. This research helps to design and optimize the ultralow-power and thermally stable magnetic devices based on the suitable heavy metal layers, structures, and CoFeB compositions.
引用
收藏
页数:13
相关论文
共 50 条
  • [41] Perpendicular Magnetic Anisotropy in Heusler Alloy Films and Their Magnetoresistive Junctions
    Hirohata, Atsufumi
    Frost, William
    Samiepour, Marjan
    Kim, Jun-young
    MATERIALS, 2018, 11 (01)
  • [42] Compact Modeling of Perpendicular-Magnetic-Anisotropy Double-Barrier Magnetic Tunnel Junction With Enhanced Thermal Stability Recording Structure
    Wang, Guanda
    Zhang, Yue
    Wang, Jinkai
    Zhang, Zhizhong
    Zhang, Kun
    Zheng, Zhenyi
    Klein, Jacques-Olivier
    Ravelosona, Dafine
    Zhang, Youguang
    Zhao, Weisheng
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2019, 66 (05) : 2431 - 2436
  • [43] Symmetry-driven large tunneling magnetoresistance in SrRuO3 magnetic tunnel junctions with perpendicular magnetic anisotropy
    Goossens, Anouk S.
    Samanta, Kartik
    Jaman, Azminul
    Boubaker, Wissem
    van Rijn, Job J. L.
    Tsymbal, Evgeny Y.
    Banerjee, Tamalika
    PHYSICAL REVIEW MATERIALS, 2024, 8 (09):
  • [44] Voltage control of a magnetic switching field for magnetic tunnel junctions with low resistance and perpendicular magnetic anisotropy
    Tezuka, N.
    Oikawa, S.
    Matsuura, M.
    Sugimoto, S.
    Nishimura, K.
    Irisawa, T.
    Nagamine, Y.
    Tsunekawa, K.
    AIP ADVANCES, 2018, 8 (05)
  • [45] Magnetic tunnel junctions using Co/Pt multilayered free layers with perpendicular magnetic anisotropy
    Machida, K.
    Furukawa, K.
    Nakayama, T.
    Funabashi, N.
    Aoshima, K.
    Kuga, K.
    Kikuchi, H.
    Ishibashi, T.
    Shimidzu, N.
    JOINT EUROPEAN MAGNETIC SYMPOSIA (JEMS), 2011, 303
  • [46] Rapid thermal annealing study of magnetoresistance and perpendicular anisotropy in magnetic tunnel junctions based on MgO and CoFeB
    Wang, Wei-Gang
    Hageman, Stephen
    Li, Mingen
    Huang, Sunxiang
    Kou, Xiaoming
    Fan, Xin
    Xiao, John Q.
    Chien, C. L.
    APPLIED PHYSICS LETTERS, 2011, 99 (10)
  • [47] Interfacial Oxidation Enhanced Perpendicular Magnetic Anisotropy in Low Resistance Magnetic Tunnel Junctions Composed of Co/Pt Multilayer Electrodes
    Park, Jeong-Heon
    Park, Chando
    Zhu, Jian-Gang
    IEEE TRANSACTIONS ON MAGNETICS, 2008, 44 (11) : 2577 - 2580
  • [48] Thermal Stability of Magnetic States in Circular Thin-Film Nanomagnets with Large Perpendicular Magnetic Anisotropy
    Chaves-O'Flynn, Gabriel D.
    Wolf, Georg
    Sun, Jonathan Z.
    Kent, Andrew D.
    PHYSICAL REVIEW APPLIED, 2015, 4 (02):
  • [49] Perpendicular magnetic tunnel junctions with a thin FeTa insertion layer for 400 °C thermal stability
    Yu, Jun
    Wang, Xinpeng
    Fukuzawa, Hideaki
    APPLIED PHYSICS EXPRESS, 2018, 11 (01)
  • [50] Compact Modeling of Perpendicular-Anisotropy CoFeB/MgO Magnetic Tunnel Junctions
    Zhang, Yue
    Zhao, Weisheng
    Lakys, Yahya
    Klein, Jacques-Olivier
    Kim, Joo-Von
    Ravelosona, Dafine
    Chappert, Claude
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2012, 59 (03) : 819 - 826