Crystal Growth and Luminescence Properties of TbGa3(BO3)4 Crystals

被引：1
作者：
Rakhmanova, M. I. [1 ]
Kokh, K. A. [2 ]
Kononova, N. G. [2 ]
Kuznetsov, A. B. [2 ]
机构：
[1] Russian Acad Sci, Nikolaev Inst Inorgan Chem, Siberian Branch, Novosibirsk, Russia
[2] Russian Acad Sci, Sobolev Inst Geol & Mineral, Siberian Branch, Novosibirsk, Russia
来源：
JOURNAL OF STRUCTURAL CHEMISTRY | 2024年 / 65卷 / 04期
基金：
俄罗斯科学基金会;
关键词：
crystal; borate; growth; luminescence; annealing; PHOSPHOR; LASER; PHOTOLUMINESCENCE; EFFICIENCY; PROGRESS; DESIGN; IONS; PR; YB;
D O I：
10.1134/S0022476624040061
中图分类号：
O61 [无机化学];
学科分类号：
070301 ; 081704 ;
摘要：
TbGa3(BO3)(4) crystals were grown using the Bi2Mo3O12:B2O3:Tb2O3 flux, which decreases contamination of Bi in the resulting crystal. The produced compound crystallizes in the R32 space group with unit cell parameters: a = 9.4512(4) & Aring;, c = 7.4532(2) & Aring;. A strong green emission of the luminescence is primarily dominated by the D-5(4) to F-7(5) transition in Tb3+. Annealing these crystals in a hydrogen atmosphere at 800 degrees C causes a reduction in the luminescence efficiency. On the other hand, annealing in air results in the increment of QY up to the value of 38%.
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收藏
页码：693 / 700
页数：8
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