CMOS IC Solutions for the 77 GHz Radar Sensor in Automotive Applications

被引:1
|
作者
Papotto, Giuseppe [1 ]
Parisi, Alessandro [1 ]
Finocchiaro, Alessandro [1 ]
Nocera, Claudio [1 ]
Cavarra, Andrea [1 ]
Castorina, Alessandro [1 ]
Palmisano, Giuseppe [2 ]
机构
[1] STMicroelectron, I-95121 Catania, Italy
[2] Univ Catania, Dipartimento Ingn Elettr Elettron Informat DIEEI, I-95125 Catania, Italy
关键词
CMOS; radar sensor; mm-wave transmitter; mm-wave receiver; electromagnetic (EM) simulations; frequency doubler; transformer-based VCO; fully depleted (FD) silicon-on-insulator (SOI); LOW-PHASE-NOISE; TRANSMITTER; AMPLIFIER; VCO; TRANSCEIVER; RANGE;
D O I
10.3390/electronics13112104
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
This paper presents recent results on CMOS integrated circuits for automotive radar sensor applications in the 77 GHz frequency band. It is well demonstrated that nano-scale CMOS technologies are the best solution for the implementation of low-cost and high-performance mm-wave radar sensors since they provide high integration level besides supporting high-speed digital processing. The present work is mainly focused on the RF front-end and summarizes the most stringent requirements of both short/medium- and long-range radar applications. After a brief introduction of the adopted technology, the paper addresses the critical building blocks of the receiver and transmitter chain while discussing crucial design aspects to meet the final performance. Specifically, effective circuit topologies are presented, which concern mixer, variable-gain amplifier, and filter for the receiver, as well as frequency doubler and power amplifier for the transmitter. Moreover, a voltage-controlled oscillator for a PLL efficiently covering the two radar bands is described. Finally, the circuit description is accompanied by experimental results of an integrated implementation in a 28 nm fully depleted silicon-on-insulator CMOS technology.
引用
收藏
页数:16
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