Analysis of Multicrystalline Si Solar Cell Improvement Using Laser-Beam-Induced Current Technique

被引:0
作者
Takeshita, T. [1 ]
Murakami, E. [1 ]
机构
[1] Kyushu Sangyo Univ, Fac Sci & Engn, Dept Elect Engn, Fukuoka 8138503, Japan
关键词
Photovoltaic cells; Aging; Laser beams; Current measurement; Measurement by laser beam; Dark current; Optical variables measurement; Laser beam; photovoltaic cells; reliability; silicon; SILICON; DEGRADATION; INTERIOR; DEFECTS;
D O I
10.1109/TDMR.2024.3367353
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The improvement of an mc-Si solar cell through reverse bias and high temperature (BT) aging was investigated using laser beam-induced current (LBIC) and electroluminescence (EL) techniques. We demonstrated that the dark current of the cell decreased with increasing aging time, which led to an increase in the maximum power after BT aging. The improvement in the maximum power was presumed to be due to a reduction in the shunt current in the equivalent circuit model, and we found that the recombination centers in the vicinity of the surface decreased with BT aging. Applying a reverse bias and a high temperature successfully improved the solar cells.
引用
收藏
页码:219 / 224
页数:6
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