Strain engineering of electronic, mechanical, and optical properties of orthorhombic III-V group monolayers by first principles calculations

Using first principles calculations, we systematically investigated the effects of strain engineering on the electronic, mechanical, and optical properties of two-dimensional (2D) orthorhombic III-V group materials, including BN, BP, BAs, AlN, AlP, and GaN. It is shown that all the III-V orthorhombic monolayers exhibit excellent mechanical anisotropy for Young's modulus, Shear modulus, and Poisson's ratio, especially for the AlN and GaN monolayers. AlN, AlP, and GaN are predicted to be indirect bandgap semiconductors, with their bandgap of 0.70, 0.15, and 0.53 eV, respectively. And BN is demonstrated to be a direct bandgap semiconductor (0.63 eV). Under uniaxial tensile strains, their electronic structures have non-monotonic anisotropic variations and these monolayers can be effectively modulated from metal to semiconductor, experiencing indirect-direct bandgap transitions. In addition, all the orthorhombic III-V materials exhibit highly anisotropic light-harvesting performances and the optical absorbance can be efficiently tailored with tensile strains applied along a- and b-directions. The strong optical absorptions in the visible light regions suggested that AlN, BN, and GaN may be optically tunable 2D materials for component absorbance layers for solar cell applications. The excellent anisotropic and tunable electronic, mechanical, and optical performances indicate that the orthorhombic III-V monolayers are promising candidates for potential applications of optoelectronics and photovoltaics.