Two-Dimensional van der Waals Materials and Heterostructures for Spin-Orbit Torque Applications

被引:1
作者
Rahaman, Towhidur [1 ]
Kumar, Abhishek [2 ]
Ray, Soumya Jyoti [1 ]
Roy, Debangsu [2 ]
机构
[1] Indian Inst Technol Patna, Dept Phys, Patna 801106, Bihar, India
[2] Indian Inst Technol Ropar, Dept Phys, Rupnagar 140001, India
关键词
Spin-orbit torque; 2D vdW materials; topological insulators; TMDs; vdW magnets; SOT-MRAM; PERPENDICULAR-ANISOTROPY; MAGNETIZATION REVERSAL; THICKNESS DEPENDENCE; TEMPERATURE; FERROMAGNETISM; ORIENTATION; MULTILAYER; INTERFACE; SYMMETRY; CRYSTAL;
D O I
10.1142/S201032472340026X
中图分类号
O59 [应用物理学];
学科分类号
摘要
Spin-orbit torque (SOT) plays an efficient and versatile role in electrical manipulation in spintronic devices at the nanoscale, which shows great promise for ultrafast and energy-efficient magnetic random-access memory (MRAM). To get high-performance SOT devices, their charge-to-spin conversion ratio must be sufficiently high and low current consumption is the desired one. Two-dimensional van der Waals (2D-vdW) materials possess strong tunability and spin-orbit coupling compared to conventional metals, which can efficiently achieve both things. This review covers a generalized introduction to SOT and its origin, their measurement techniques, SOTs observed in various 2D material-based heterostructures made of topological insulators (TIs), transition metal dichalcogenides (TMDs), and van der Waals (vdW) materials as they have excellent electronic properties down to their monolayer limit and ease of integration. Further, it covers the recent progress of SOT devices in each category, highlighting their potential for achieving high-performance and energy-efficient spintronic devices and their potential applications.
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页数:17
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