Study on High Voltage Reverse Bias (HTRB) Test Method of 6.5 kV High-Voltage IGBT Modules for Railway

被引：0

作者：

Yan, Yuxing ^{[1
]}

Wang, Weijie ^{[2
]}

Deng, Erping ^{[3
]}

Wang, Zuoyi ^{[1
]}

Wang, Yanhao ^{[1
]}

He, Qingtong ^{[1
]}

Sun, Hongyu ^{[1
]}

Huang, Yongzhang ^{[1
]}

机构：

[1] North China Elect Power Univ, State Key Lab Alternate Elect Power Syst Renewable, Beijing 102206, Peoples R China

[2] China Acad Railway Sci Co Ltd, Locomot & Car Res Inst, Beijing 100081, Peoples R China

[3] Hefei Univ Technol, State Key Lab High Efficiency & High Qual Convers, Hefei 230009, Peoples R China

来源：

IEEE TRANSACTIONS ON POWER ELECTRONICS | 2024年 / 39卷 / 11期

基金：

中国国家自然科学基金;

关键词：

Heating systems; Junctions; High-voltage techniques; Leakage currents; Insulated gate bipolar transistors; Temperature measurement; Multichip modules; 6.5; kV; high temperature reverse bias (HTRB); high-voltage high-temperature high-humidity reverse bias (HV-H3TRB); high-voltage power IGBT modules; railway; self-heating; thermal runaway; OPERATION;

D O I：

10.1109/TPEL.2024.3441050

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this article, a temperature stabilization method of high-temperature reverse bias (HTRB) and high-voltage high-temperature high-humidity reverse bias (HV-H3TRB) tests for 6.5 kV high-voltage power IGBT modules used in railway is proposed. The traditional climate chamber is not suitable for stabilizing the temperature of high-voltage IGBT modules, as there are multi-chips connected in parallel, which can create a high leakage current during the high-voltage blocking state at high junction temperature. The proposed junction temperature stabilization method can avoid thermal runaway caused by positive feedback between power loss and junction temperature in HTRB and HV-H3TRB tests, and the effectiveness is confirmed by experimental results. Furthermore, a precise junction temperature measurement method based on leakage current is proposed, which can be used to set initial junction temperature correctly for HTRB and HV-H3TRB tests.

引用

页码：14284 / 14294

页数：11

共 50 条

[1] Characterisation of high-voltage IGBT modules at high temperature and high currents
Busatto, G
Abbate, C
Cascone, B
Manzo, R
Fratelli, L
Giannini, G
Iannuzzo, F
Velardi, F
PEDS 2003 : FIFTH INTERNATIONAL CONFERENCE ON POWER ELECTRONICS AND DRIVE SYSTEMS, VOLS 1 AND 2, PROCEEDINGS, 2003, : 1391 - 1396
[2] Large-capacity, high-voltage IGBT modules
Kanazawa, Ken'ichi
Mitsubishi Electric Advance, 1994, 66 : 2 - 3
[3] LARGE-CAPACITY, HIGH-VOLTAGE IGBT MODULES
KANAZAWA, K
MITSUBISHI ELECTRIC ADVANCE, 1994, 66 : 2 - 3
[4] Fabrication of 6.5kV High-voltage Full SiC Power MOSFET Modules
Jin X.
Li S.
Tian L.
Chen Y.
Hao F.
Bai S.
Pan Y.
Zhongguo Dianji Gongcheng Xuebao/Proceedings of the Chinese Society of Electrical Engineering, 2020, 40 (06): : 1753 - 1758
[5] Reverse-channel, high-voltage lateral IGBT
Chow, T.Paul
Pattanayak, Deva N.
Baliga, B.Jayant
Adler, Michael S.
IEEE International Symposium on Power Semiconductor Devices & ICs, 1994, : 57 - 61
[6] Long Term High Temperature Reverse Bias (HTRB) Test on High Voltage SiC-JBS-Diodes
Hoffmann, Felix
Mihaila, Andrei
Kranz, Lukas
Godignon, Philippe
Kaminski, Nando
PRODCEEDINGS OF THE 2018 IEEE 30TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), 2018, : 435 - 438
[7] Reverse Bias Stress Test of GaN HEMTs for High-Voltage Switching Applications
Dammann, M.
Czap, H.
Ruester, J.
Baeumler, M.
Guetle, F.
Waltereit, P.
Benkhelifa, F.
Reiner, R.
Caesar, M.
Konstanzer, H.
Mueller, S.
Quay, R.
Mikulla, M.
Ambacher, O.
2012 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP FINAL REPORT, 2012, : 105 - 108
[8] High-Voltage IGBT Switching Arrays
Fink, David A.
Torti, Richard
Reinhardt, Nicholas
Gaudreau, Marcel P. J.
Mansfield, Frank
IEEE TRANSACTIONS ON MAGNETICS, 2009, 45 (01) : 282 - 287
[9] Series connection of high voltage IGBT modules
Bruckmann, M
Sommer, R
Fasching, M
Sigg, J
CONFERENCE RECORD OF THE 1998 IEEE INDUSTRY APPLICATIONS CONFERENCE, VOLS 1-3, 1998, : 1067 - 1072
[10] High-voltage bias testing of thin-film PV modules
Dhere, NG
Bet, SM
Patil, HP
PROCEEDINGS OF 3RD WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION, VOLS A-C, 2003, : 1923 - 1926

← 1 2 3 4 5 →