First Demonstration of High-Frequency InAlN/GaN High-Electron-Mobility Transistor Using GaN-on-Insulator Technology via 200 mm Wafer Bonding

In0.17Al0.83N/GaN high-electron-mobility transistor (HEMT) using GaN-on-Insulator (GaNOI) technology via 200 mm wafer bonding technique is developed with good DC and RF performance and high fT/fmax. Measurements obtained from X-Ray diffraction and micro-Raman spectroscopy have demonstrated a 5% reduction in "a lattice strain," which results in the improvement of the sheet resistance (Rsh) from 301 to 284 Omega square-1. A 120 nm gate-length device achieves a peak fT up to 96 GHz which yields a fT x Lg value of 11.5 GHz mu m, which compares favorably with reported GaN-based HEMTs on Si. These results demonstrate that GaNOI HEMT on Si is an attractive candidate for future mm-wave applications. The implementation of GaNOI technology facilitates the integration of GaN devices into a chip alongside complementary metal-oxide-semiconductor technology that opens up the potential for integrated high-power and RF applications, enabling more compact and efficient systems. In0.17Al0.83 N /GaN high-electron-mobility transistor using GaN-on-Insulator (GaNOI) technology via 200 mm wafer bonding technique is developed with good DC and RF performance. The implementation of GaNOI technology facilitates the integration of GaN devices into a chip alongside complementary metal-oxide-semiconductor technology that opens up the potential for integrated high-power and RF applications.image (c) 2024 WILEY-VCH GmbH