Development of high strength W/V/Au/ODS-Cu joint using HIP process

被引:6
作者
Noto, Hiroyuki [1 ]
Yamada, Tetsuya [2 ]
Hishinuma, Yoshimitsu [1 ]
Muroga, Takeo [1 ]
机构
[1] Natl Inst Fus Sci, Oroshi 322-6, Toki, Gifu 5095292, Japan
[2] Nagoya Univ, Nagoya, Aichi 4648601, Japan
关键词
Tungsten; Plasma facing materials; Copper; Bonding; Vanadium insert; Gold insert; ALLOYS;
D O I
10.1016/j.nme.2016.05.013
中图分类号
TL [原子能技术]; O571 [原子核物理学];
学科分类号
0827 ; 082701 ;
摘要
A new high strength bonding method between Tungsten (W) and Oxide Dispersion Strengthening copper (ODS-Cu) using vanadium (V) and gold (Au) inserts was investigated and the resulting joints were characterized with SEM, micro-hardness and four point bending test. For the joints using thick Au inserts (300 mu m), a hardened reaction layer was observed in the V/Au interface region. On the other hand, the joints using thin Au inserts (0.7 mu m) exhibited a serrated interface layer having homogeneous hardness profiles. In this case, the observed behavior is a reflection of degradation of melting point by inter diffusion between Au and Cu. Room temperature bending test of the joints with and without 0.7 mu m inserts at interface between V and ODS-Cu exhibited yielding behavior with the strength of approximately 300 MPa which is close to that of ODS-Cu. The joint with the thin Au insert had a serrated interface which implies appearance of liquid phase by reaction between Au and Cu. (C) 2016 Published by Elsevier Ltd.
引用
收藏
页码:411 / 415
页数:5
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